CG2H30070F Datasheet - MACOM

CG2H30070F RF Power GaN HEMT

The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandw.

CG2H30070F Features

* 0.5 - 3.0 GHz application circuit

* 85 W POUT typical at 28 V

* 10 dB power gain

* 58% drain efficiency

* Internally matched Applications

* Broadband amplifiers

* Electronic counter measures

* Signal jamming

* Milcom

CG2H30070F Datasheet (1.23 MB)

CG2H30070F Datasheet Preview — Preview of CG2H30070F PDF

Datasheet Details

Part number:

CG2H30070F

Manufacturer:

MACOM

File Size:

1.23 MB

Description:

Rf power gan hemt.

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TAGS

CG2H30070F Power GaN HEMT MACOM

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