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CG2H30070F - RF Power GaN HEMT

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Datasheet Details

Part number CG2H30070F
Manufacturer MACOM
File Size 1.23 MB
Description RF Power GaN HEMT
Datasheet download datasheet CG2H30070F-MACOM.pdf

CG2H30070F Product details

Description

The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT).

Features

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