CG2H30070F Datasheet, Hemt, MACOM

CG2H30070F Features

• Hemt
• 0.5 - 3.0 GHz application circuit
• 85 W POUT typical at 28 V
• 10 dB power gain
• 58% drain efficiency
• Internally matched Applications

PDF File Details

Part number:

CG2H30070F

Manufacturer:

MACOM

File Size:

1.23MB

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📄 Datasheet

Description:

Rf power gan hemt. The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating fro

CG2H30070F Application

• Applications GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H30070F ideal for linear and compressed ampli

TAGS

CG2H30070F

MACOM

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