* Up to 6 GHz Operation
* 17 dB Small Signal Gain at 2.0 GHz
* 15 dB Small Signal Gain at 4.0 GHz
* 30 W typical PSAT
* 70 % Efficiency at PSAT
* 28 V Operation APPLICATIONS
* 2-Way Private Radio
* Broadband Amplifiers
CG2H40025
CREE
1.36 MB
Rf power gan hemt.
CG2H40025
25 W, 28 V RF Power GaN HEMT
Cree’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025.
📁 Related Datasheet
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CG2 MINIATURE CLAMPER / DAMPER GLASS PASSIVATED RECTIFIER (General Semiconductor)
