CG2H40025 Datasheet - CREE

CG2H40025 RF Power GaN HEMT

CG2H40025 25 W, 28 V RF Power GaN HEMT Cree’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, .

CG2H40025 Features

* Up to 6 GHz Operation

* 17 dB Small Signal Gain at 2.0 GHz

* 15 dB Small Signal Gain at 4.0 GHz

* 30 W typical PSAT

* 70 % Efficiency at PSAT

* 28 V Operation APPLICATIONS

* 2-Way Private Radio

* Broadband Amplifiers

CG2H40025 Datasheet (1.36 MB)

CG2H40025 Datasheet Preview — Preview of CG2H40025 PDF

Datasheet Details

Part number:

CG2H40025

Manufacturer:

CREE

File Size:

1.36 MB

Description:

Rf power gan hemt.

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CG2H40025 Power GaN HEMT CREE

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