CG2H40025 RF Power GaN HEMT

CREE

Description

CG2H40025 25 W, 28 V RF Power GaN HEMT Cree’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CG2H40025.

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Datasheet Specifications

Part number: CG2H40025
Manufacturer: CREE
File Size: 1.36 MB
Datasheet: CG2H40025-CREE.pdf
Description: RF Power GaN HEMT

Features

* Up to 6 GHz Operation
* 17 dB Small Signal Gain at 2.0 GHz
* 15 dB Small Signal Gain at 4.0 GHz
* 30 W typical PSAT
* 70 % Efficiency at PSAT

Applications

* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill packages. PPNa: cCkGa2gHe4T0y0p2e5: 4P4a0n1d96CGa2ndH4404002156F6 F

CG2H40025 Distributors

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CG2H40025 Power GaN HEMT CREE

CREE CG2H40025-like datasheet