CG2H40120 Datasheet - MACOM

CG2H40120 28V RF Power GaN HEMT

The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capab.

CG2H40120 Features

* Up to 2.5 GHz Operation

* 20 dB Small Signal Gain at 1.0 GHz

* 15 dB Small Signal Gain at 2.0 GHz

* 130 W Typical PSAT

* 70% Efficiency at PSAT

* 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Test

CG2H40120-MACOM.pdf

CG2H40120 Datasheet Preview — Preview of CG2H40120 PDF

Datasheet Details

Part number:

CG2H40120

Manufacturer:

MACOM

File Size:

869.85 KB

Description:

28v rf power gan hemt.

CG2H40120 Distributor

📁 Related Datasheet

CG2H40010 RF Power GaN HEMT (MACOM)

CG2H40010 RF Power GaN HEMT (CREE)

CG2H40025 RF Power GaN HEMT (CREE)

CG2H40025 RF Power GaN HEMT (MACOM)

CG2H40025 28V RF Power GaN HEMT (Wolfspeed)

CG2H40035 RF Power GaN HEMT (Wolfspeed)

CG2H40045 RF Power GaN HEMT (MACOM)

CG2H40045 RF Power GaN HEMT (CREE)

TAGS

CG2H40120 CG2H40120 28V Power GaN HEMT MACOM