CG2H40120 - 28V RF Power GaN HEMT
The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capab
CG2H40120 Features
* Up to 2.5 GHz Operation
* 20 dB Small Signal Gain at 1.0 GHz
* 15 dB Small Signal Gain at 2.0 GHz
* 130 W Typical PSAT
* 70% Efficiency at PSAT
* 28 V Operation Applications
* 2-Way Private Radio
* Broadband Amplifiers
* Test
