CG2H40120 Datasheet, Hemt, MACOM

CG2H40120 Features

• Hemt
• Up to 2.5 GHz Operation
• 20 dB Small Signal Gain at 1.0 GHz
• 15 dB Small Signal Gain at 2.0 GHz
• 130 W Typical PSAT
• 70% Efficiency at PSAT

PDF File Details

Part number:

CG2H40120

Manufacturer:

MACOM

File Size:

869.85kb

Download:

📄 Datasheet

Description:

28v rf power gan hemt. The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40120, operating from a 28 vol

CG2H40120 Application

• Applications GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40120 ideal for linear and compressed amplif

TAGS

CG2H40120

MACOM

📁 Related Datasheet

CG2H40010 - RF Power GaN HEMT (MACOM)
CG2H40010 10 W, DC - 8 GHz, RF Power GaN HEMT Description The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT.

CG2H40010 - RF Power GaN HEMT (CREE)
CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG.

CG2H40025 - RF Power GaN HEMT (CREE)
CG2H40025 25 W, 28 V RF Power GaN HEMT Cree’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025.

CG2H40025 - RF Power GaN HEMT (MACOM)
CG2H40025 25 W, 28 V RF Power GaN HEMT Description The CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The .

CG2H40025 - 28V RF Power GaN HEMT (Wolfspeed)
CG2H40025 25 W, 28 V RF Power GaN HEMT Description Wolfspeed’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEM.

CG2H40035 - RF Power GaN HEMT (Wolfspeed)
CG2H40035 35 W, DC - 6 GHz, RF Power GaN HEMT Description Wolfspeed’s CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transist.

CG2H40045 - RF Power GaN HEMT (MACOM)
CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Description The CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

CG2H40045 - RF Power GaN HEMT (CREE)
CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree’s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2.

CG2H30070F - RF Power GaN HEMT (MACOM)
CG2H30070F 70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT Description The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobilit.

CG2 - MINIATURE CLAMPER / DAMPER GLASS PASSIVATED RECTIFIER (General Semiconductor)
CG2 AND DG2 MINIATURE CLAMPER / DAMPER GLASS PASSIVATED RECTIFIER Reverse Voltage - 1400 to 1500 Volts * D Forward Current - 2.0 Amperes FEATURES P .