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CG2H40120 Datasheet - MACOM

CG2H40120 - 28V RF Power GaN HEMT

The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capab

CG2H40120 Features

* Up to 2.5 GHz Operation

* 20 dB Small Signal Gain at 1.0 GHz

* 15 dB Small Signal Gain at 2.0 GHz

* 130 W Typical PSAT

* 70% Efficiency at PSAT

* 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Test

CG2H40120-MACOM.pdf

Preview of CG2H40120 PDF
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Datasheet Details

Part number:

CG2H40120

Manufacturer:

MACOM

File Size:

869.85 KB

Description:

28v rf power gan hemt.

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