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CG2H40120 28V RF Power GaN HEMT

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Description

CG2H40120 120 W, 28 V, RF Power GaN HEMT .
The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

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Datasheet Specifications

Part number
CG2H40120
Manufacturer
MACOM
File Size
869.85 KB
Datasheet
CG2H40120-MACOM.pdf
Description
28V RF Power GaN HEMT

Features

* Up to 2.5 GHz Operation
* 20 dB Small Signal Gain at 1.0 GHz
* 15 dB Small Signal Gain at 2.0 GHz
* 130 W Typical PSAT
* 70% Efficiency at PSAT

CG2H40120 Distributors

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📌 All Tags

CG2H40120 28V Power GaN HEMT MACOM
MACOM CG2H40120-like datasheet
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