CG2H40120 Datasheet - MACOM

CG2H40120, 28V RF Power GaN HEMT

CG2H40120 120 W, 28 V, RF Power GaN HEMT .
The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Datasheet Details

Part number:

CG2H40120

Manufacturer:

MACOM

File Size:

869.85 KB

Description:

28V RF Power GaN HEMT

Features

* Up to 2.5 GHz Operation
* 20 dB Small Signal Gain at 1.0 GHz
* 15 dB Small Signal Gain at 2.0 GHz
* 130 W Typical PSAT
* 70% Efficiency at PSAT

CG2H40120 Distributors

📁 Related Datasheet

📌 All Tags

MACOM CG2H40120-like datasheet