CG2H40120

28V RF Power GaN HEMT

MACOM

CG2H40120 Features

* Up to 2.5 GHz Operation

* 20 dB Small Signal Gain at 1.0 GHz

* 15 dB Small Signal Gain at 2.0 GHz

* 130 W Typical PSAT

* 70% Efficiency at PSAT

* 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Test

CG2H40120 General Description

The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capab.

CG2H40120 Datasheet (869.85 KB)

CG2H40120 Datasheet Preview — Preview of CG2H40120 PDF

Datasheet Details

Part number:

CG2H40120

Manufacturer:

MACOM

File Size:

869.85 KB

Description:

28v rf power gan hemt.

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CG2H40120 28V Power GaN HEMT MACOM

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CG2H40120 Features

CG2H40120 General Description

Datasheet Details

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Description:

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