CG2H40045 Datasheet - MACOM

CG2H40045 RF Power GaN HEMT

The CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capab.

CG2H40045 Features

* Up to 4 GHz Operation

* 18 dB Small Signal Gain at 2.0 GHz

* 14 dB Small Signal Gain at 4.0 GHz

* 55 W Typical PSAT

* 60% Efficiency at PSAT

* 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Cellula

CG2H40045-MACOM.pdf

CG2H40045 Datasheet Preview — Preview of CG2H40045 PDF

Datasheet Details

Part number:

CG2H40045

Manufacturer:

MACOM

File Size:

1.39 MB

Description:

Rf power gan hemt.

CG2H40045 Distributor

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TAGS

CG2H40045 CG2H40045 Power GaN HEMT MACOM