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CG2H40045 RF Power GaN HEMT

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Description

CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT .
The CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

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Datasheet Specifications

Part number
CG2H40045
Manufacturer
MACOM
File Size
1.39 MB
Datasheet
CG2H40045-MACOM.pdf
Description
RF Power GaN HEMT

Features

* Up to 4 GHz Operation
* 18 dB Small Signal Gain at 2.0 GHz
* 14 dB Small Signal Gain at 4.0 GHz
* 55 W Typical PSAT
* 60% Efficiency at PSAT

CG2H40045 Distributors

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📌 All Tags

CG2H40045 Power GaN HEMT MACOM
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