CG2H40010 - RF Power GaN HEMT
The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capab
CG2H40010 Features
* Up to 8 GHz Operation
* 18 dB Small Signal Gain at 2.0 GHz
* 16 dB Small Signal Gain at 4.0 GHz
* 17 W typical PSAT
* 70% Efficiency at PSAT
* 28 V Operation Applications
* 2-Way Private Radio
* Broadband Amplifiers
* Cellula
