CG2H40010 RF Power GaN HEMT

MACOM

Description

CG2H40010 10 W, DC - 8 GHz, RF Power GaN HEMT .
The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

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Datasheet Specifications

Part number: CG2H40010
Manufacturer: MACOM
File Size: 942.02 KB
Datasheet: CG2H40010-MACOM.pdf
Description: RF Power GaN HEMT

Features

* Up to 8 GHz Operation
* 18 dB Small Signal Gain at 2.0 GHz
* 16 dB Small Signal Gain at 4.0 GHz
* 17 W typical PSAT
* 70% Efficiency at PSAT

Applications

* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw-down, flange and solderdown, pill packages. Package Types: 440196, & 440166 PNs: CG2H40010P & CG2H40010F Fe

CG2H40010 Distributors

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