CG2H40010

RF Power GaN HEMT

MACOM

CG2H40010 Features

* Up to 8 GHz Operation

* 18 dB Small Signal Gain at 2.0 GHz

* 16 dB Small Signal Gain at 4.0 GHz

* 17 W typical PSAT

* 70% Efficiency at PSAT

* 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Cellula

CG2H40010 General Description

The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capab.

CG2H40010 Datasheet (942.02 KB)

CG2H40010 Datasheet Preview — Preview of CG2H40010 PDF

Datasheet Details

Part number:

CG2H40010

Manufacturer:

MACOM

File Size:

942.02 KB

Description:

Rf power gan hemt.

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CG2H40010 Power GaN HEMT MACOM

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CG2H40010 Features

CG2H40010 General Description

Datasheet Details

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