CG2H40010 Datasheet - MACOM

CG2H40010, RF Power GaN HEMT

CG2H40010 10 W, DC - 8 GHz, RF Power GaN HEMT .
The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

datasheet Preview Page 1 from Datasheet4u.com

CG2H40010-MACOM.pdf

CG2H40010 Datasheet Preview — Preview of CG2H40010 PDF

Datasheet Details

Part number:

CG2H40010

Manufacturer:

MACOM

File Size:

942.02 KB

Description:

RF Power GaN HEMT

Features

* Up to 8 GHz Operation
* 18 dB Small Signal Gain at 2.0 GHz
* 16 dB Small Signal Gain at 4.0 GHz
* 17 W typical PSAT
* 70% Efficiency at PSAT

Applications

* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw-down, flange and solderdown, pill packages. Package Types: 440196, & 440166 PNs: CG2H40010P & CG2H40010F Fe

CG2H40010 Distributors

📁 Related Datasheet

CG2H40025 CG2H40035 CG2 CG21 CG2163X3 CG2164X3

📌 All Tags

CG2H40010 Power GaN HEMT MACOM

MACOM CG2H40010-like datasheet

CG2H40045

CG2H40120

CG2H30070F