CG2H40010 Datasheet, Hemt, MACOM

CG2H40010 Features

• Hemt
• Up to 8 GHz Operation
• 18 dB Small Signal Gain at 2.0 GHz
• 16 dB Small Signal Gain at 4.0 GHz
• 17 W typical PSAT
• 70% Efficiency at PSAT

PDF File Details

Part number:

CG2H40010

Manufacturer:

MACOM

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942.02kb

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📄 Datasheet

Description:

Rf power gan hemt. The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 vol

CG2H40010 Application

• Applications GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and compressed amplif

TAGS

CG2H40010

MACOM

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