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CG2H40035 RF Power GaN HEMT

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Description

CG2H40035 35 W, DC - 6 GHz, RF Power GaN HEMT .
Wolfspeed’s CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

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Datasheet Specifications

Part number
CG2H40035
Manufacturer
Wolfspeed
File Size
2.29 MB
Datasheet
CG2H40035-Wolfspeed.pdf
Description
RF Power GaN HEMT

Features

* Up to 6 GHz Operation
* 40 W typical PSAT
* 64% Efficiency at PSAT
* 14 dB Small Signal Gain at 3.5 GHz

Applications

* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40035 ideal for linear and compressed amplifier circuits. The transistor is available in both a screw-down, flange package and solder-down, pill package. Package Types: 440196 & 440166 PNs: CG2H40035P & CG2H4

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