GTRB266908FC Datasheet - MACOM

GTRB266908FC, Thermally-Enhanced High Power RF GaN on SiC HEMT

GTRB266908FC Thermally-Enhanced High Power RF GaN on SiC HEMT 630 W, 48 V, 2515 * 2675 MHz .
The GTRB266908FC is a 630-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier.

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Datasheet Details

Part number:

GTRB266908FC

Manufacturer:

MACOM

File Size:

893.10 KB

Description:

Thermally-Enhanced High Power RF GaN on SiC HEMT

Features

* high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 PN: GTRB266908FC Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 1000 mA, VGS(Peak) = -4.7 V, ƒ = 2675 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 M

GTRB266908FC Distributors

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GTRB266908FC Thermally-Enhanced High Power GaN SiC HEMT MACOM

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