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GTRA184602FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

Datasheet Summary

Description

The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Features

  • input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 150 mA, VGS(PEAK) =.
  • 5.5 V, ƒ = 1875 MHz, 3GPP WCDMA signal, 10 dB PAR 3.84 MHz bandwidth 40 80 35 Efficiency 60 30 40 25 20 20 Gain 0 15 -20 10 -40 5 0 25 PAR @ 0.01% CCDF -60 g184602fc-gr1a -80 30 35 40 45 50 55 Average Output Power (dBm) Features.

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Datasheet Details

Part number GTRA184602FC
Manufacturer Wolfspeed
File Size 687.51 KB
Description Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet download datasheet GTRA184602FC Datasheet
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Full PDF Text Transcription

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GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 150 mA, VGS(PEAK) = –5.5 V, ƒ = 1875 MHz, 3GPP WCDMA signal, 10 dB PAR 3.84 MHz bandwidth 40 80 35 Efficiency 60 30 40 25 20 20 Gain 0 15 -20 10 -40 5 0 25 PAR @ 0.
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