GTRB224402FC Description
The GTRB224402FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
GTRB224402FC Key Features
- GaN on SiC HEMT technology
- Typical Pulsed CW performance, 2200 MHz, 48 V, 10 µs pulse width, 10% duty cycle, bined outputs
- Output power at P3dB = 400 W
- Efficiency at P3dB = 65%
- Human Body Model Class 1C (per ANSI/ ESDA/JEDEC JS-001)
- Pb-free and RoHS pliant
- 2200 MHz) VDD = 48 V, IDQ = 750 mA, VGS(peak) = -5.15 V, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF
- (dBc) -28.7 -29.9 -30.8
- 3.1 6.3 -5 -10