Description
The GTRB224402FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
Features
- high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 750 mA,
VGS(PEAK) = -5.15 V, ƒ = 2200 MHz, 3GPP
WCDMA signal, PAR = 10 dB, 3.84 MHz BW
24
60
20
40
16
Efficiency
20
Gain
12
0
8
-20
PAR @ 0.01% CCDF
4
-40
0 27
gtrb224402fc_g1
-60
32
37
42
47
52
Average Output Power (dBm)
Features.
- GaN on SiC HEMT technology.
GTRB224402FC Datasheet
