GTRB224402FC
GTRB224402FC is Thermally-Enhanced High Power RF GaN on SiC HEMT manufactured by MACOM Technology Solutions.
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 2110- 2200 MHz
Description
The GTRB224402FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It Features high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 750 mA,
VGS(PEAK) = -5.15 V, ƒ = 2200 MHz, 3GPP
WCDMA signal, PAR = 10 dB, 3.84 MHz BW
Efficiency
Gain
-20
PAR @ 0.01% CCDF
-40
0 27 gtrb224402fc_g1
-60
Aver...
