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GTRB264318FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

General Description

The GTRB264318FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Key Features

  • internal matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VCC = 48 V, IDQ = 150 mA, VGS(PEAK) =.
  • 5.6 V, ƒ = 2690 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 20 60 Gain 16 45 12 8 4 30 30 Efficiency 15 PAR @ 0.01% CCDF 35 40 45 gt r b264318f c- par 1 0 50 Average Output Power (dBm) Features.
  • GaN on SiC HEMT technology.

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GTRB264318FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 2500 – 2700 MHz Description The GTRB264318FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VCC = 48 V, IDQ = 150 mA, VGS(PEAK) = –5.6 V, ƒ = 2690 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 20 60 Gain 16 45 12 8 4 30 30 Efficiency 15 PAR @ 0.