Description
The GTRB264318FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
Features
- internal matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VCC = 48 V, IDQ = 150 mA,
VGS(PEAK) =.
- 5.6 V, ƒ = 2690 MHz 3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
20
60
Gain
16
45
12
8
4 30
30 Efficiency
15
PAR @ 0.01% CCDF
35
40
45
gt r b264318f c- par 1
0
50
Average Output Power (dBm)
Features.
- GaN on SiC HEMT technology.
GTRB264318FC Datasheet
