GTRB264318FC Datasheet | MACOM Technology Solutions

Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 2500 - 2700 MHz Description The GTRB264318FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It Features internal matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VCC = 48 V, IDQ = 150 mA, VGS(PEAK) = - 5.6 V, ƒ = 2690 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth Gain 4 30 30 Efficiency PAR @ 0.01% CCDF 45 gt r b264318f c- par 1 Average...