GTRB264318FC Description
The GTRB264318FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
GTRB264318FC Key Features
- GaN on SiC HEMT technology
- Broadband Internal matching
- Typical pulsed CW performance: 10 µs pulse width, 10% duty cycle, 2675 MHz, 48 V, Doherty fixture
- Gain = 15 dB @ 47.2 dBm
- Efficiency = 53% @ 47.2 dBm
- Output power at P3dB = 400 W
- Human Body Model Class 1B (per ANSI/ESDA/ JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS pliant
- Unit dB % dBc dB