Description
The GTRB266908FC is a 630-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
Features
- high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 PN: GTRB266908FC
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 1000 mA, VGS(Peak) = -4.7 V, ƒ = 2675 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
40
80
35
60
30
Efficiency
40
25
20
Gain
20
0
15
-20
10
-40
5
0 25
PAR @ 0.01% CCDF
-60
gtrb266908fc_g1
-80
30 35 40 45 50 55
Average Output Power (dBm)
Features.
GTRB266908FC Datasheet
