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GTRB266908FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

General Description

The GTRB266908FC is a 630-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.

Key Features

  • high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 PN: GTRB266908FC Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 1000 mA, VGS(Peak) = -4.7 V, ƒ = 2675 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 40 80 35 60 30 Efficiency 40 25 20 Gain 20 0 15 -20 10 -40 5 0 25 PAR @ 0.01% CCDF -60 gtrb266908fc_g1 -80 30 35 40 45 50 55 Average Output Power (dBm) Features.

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GTRB266908FC Thermally-Enhanced High Power RF GaN on SiC HEMT 630 W, 48 V, 2515 – 2675 MHz Description The GTRB266908FC is a 630-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 PN: GTRB266908FC Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 1000 mA, VGS(Peak) = -4.7 V, ƒ = 2675 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 40 80 35 60 30 Efficiency 40 25 20 Gain 20 0 15 -20 10 -40 5 0 25 PAR @ 0.