GTRB266908FC
GTRB266908FC is Thermally-Enhanced High Power RF GaN on SiC HEMT manufactured by MACOM Technology Solutions.
Thermally-Enhanced High Power RF GaN on SiC HEMT 630 W, 48 V, 2515
- 2675 MHz
Description
The GTRB266908FC is a 630-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It Features high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248KC-6/2 PN: GTRB266908FC
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 1000 mA, VGS(Peak) = -4.7 V, ƒ = 2675 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
Efficiency
Gain
-20
-40
0 25
PAR @ 0.01% CCDF
-60...
