GTRB266908FC Description
The GTRB266908FC is a 630-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
GTRB266908FC Key Features
- GaN on SiC HEMT technology
- Typical Pulsed CW performance, 2675 MHz, 48 V, 10 µs pulse width, 10% duty cycle, bined outputs
- Output power at P4dB = 630 W
- Efficiency at P4dB = 73%
- Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS pliant
- 2675 MHz) VDD = 48 V, IDQ = 1000 mA, POUT = 102.3 W, VGS(peak) = VGS at IDQ(peak) = 1000 mA
- 1.7 V, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF
- 31.3 -36.5 -34.6
- 31.5 -36.3 -34.6