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GTRB267008FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

General Description

The GTRB267008FC is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Key Features

  • high efficiency, and a thermally-enhanced package with earless flange. Package Type: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 1000 mA, VGS(PEAK) = -4.8 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 Gain 16 20 12 0 8 -20 PAR @ 0.01% CCDF 4 -40 0 -60 25 30 35 40 45 50 55 Average Output Power (dBm) Features.
  • GaN on SiC HEMT technology.
  • Typical pulsed.

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GTRB267008FC Thermally-Enhanced High Power RF GaN on SiC HEMT 620 W, 48 V, 2496 – 2690 MHz Description The GTRB267008FC is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange. Package Type: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 1000 mA, VGS(PEAK) = -4.8 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 Gain 16 20 12 0 8 -20 PAR @ 0.