GTRB267008FC
GTRB267008FC is Thermally-Enhanced High Power RF GaN on SiC HEMT manufactured by MACOM Technology Solutions.
Thermally-Enhanced High Power RF GaN on SiC HEMT 620 W, 48 V, 2496
- 2690 MHz
Description
The GTRB267008FC is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It Features high efficiency, and a thermally-enhanced package with earless flange.
Package Type: H-37248KC-6/2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 1000 mA, VGS(PEAK) = -4.8 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
Efficiency
Gain
-20
PAR @ 0.01% CCDF
-40
-60
25 30 35 40 45 50 55
Average Output Power...
