GTRB267008FC Description
The GTRB267008FC is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
GTRB267008FC Key Features
- GaN on SiC HEMT technology
- Typical pulsed CW performance, 2690 MHz, 48 V, bined outputs, 10 µs pulse width, 10% duty cycle
- Output power at P4dB = 619 W
- Efficiency at P4dB = 72%
- Human Body Model Class 1C (per ANSI/ESDA/ JEDEC JS-001)
- Pb-free and RoHS pliant
- 2690 MHz) VDD = 48 V, IDQ = 1000 mA, VGS(Peak) =
- 4.8 V, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF
- (dBc) -28.3 -32.0 -33.5
- VGS(th)