Description
The GTRB267008FC is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
Features
- high efficiency, and a thermally-enhanced package with earless flange. Package Type: H-37248KC-6/2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 1000 mA, VGS(PEAK) = -4.8 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
24
60
Efficiency
20
40
Gain
16
20
12
0
8
-20
PAR @ 0.01% CCDF
4
-40
0
-60
25 30 35 40 45 50 55
Average Output Power (dBm)
Features.
- GaN on SiC HEMT technology.
- Typical pulsed.
GTRB267008FC Datasheet
