GTRB206002FC Description
The GTRB206002FC/1 is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
GTRB206002FC Key Features
- GaN on SiC HEMT technology
- Typical Pulsed CW performance, 2020 MHz, 48 V, 10 µs pulse width, 10% duty cycle, bined outputs
- Output power at P3dB = 500 W
- Efficiency at P3dB = 63%
- Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS pliant
- 2020 MHz) VDD = 48 V, IDQ = 600 mA, VGS(peak) = VGS at IDQ(peak) = 400 mA
- 2.7 V, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF
- VGS(th)
- 3.05 -3.05