Description
The GTRB206002FC/1 is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
Features
- high efficiency, and a thermally-enhanced package with earless flange. GTRB206002FC/1 Package H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 600 mA,
VGS(PEAK) = -5.8 V, ƒ = 2020 MHz, 3GPP
WCDMA signal, PAR = 10 dB, 3.84 MHz BW
32 28 24 20 16 12
8 4 0
27
80
Efficiency
60
40
Gain
20
0
-20
-40
PAR @ 0.01% CCDF
-60
gtrb206002fc_g1
-80
32 37 42 47 52 57
Average Output Power (dBm)
Features.
- GaN on SiC HEMT tech.
GTRB206002FC Datasheet
