GTRB204402FC
GTRB204402FC is Thermally-Enhanced High Power RF GaN on SiC HEMT manufactured by MACOM Technology Solutions.
GTRB204402FC/1
Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 48 V, 1930
- 2020 MHz
Description
The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It Features high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 150 mA, VGS(Peak) = -5.5 V,
ƒ = 2020 MHz, 3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
40 35 30 25 20 15 10
5 0
Efficiency
20 Gain
-20
-40
PAR @ 0.01% CCDF
-60
GTRB204402FC_g1
-80
30 35...
