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GTRB204402FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

General Description

The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.

Key Features

  • high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 150 mA, VGS(Peak) = -5.5 V, ƒ = 2020 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 40 35 30 25 20 15 10 5 0 25 80 Efficiency 60 40 20 Gain 0 -20 -40 PAR @ 0.01% CCDF -60 GTRB204402FC_g1 -80 30 35 40 45 50 55 Average Output Power (dBm) Features.
  • GaN on SiC HEMT technology.

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GTRB204402FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 48 V, 1930 – 2020 MHz Description The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 150 mA, VGS(Peak) = -5.5 V, ƒ = 2020 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 40 35 30 25 20 15 10 5 0 25 80 Efficiency 60 40 20 Gain 0 -20 -40 PAR @ 0.