Description
The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applications.
Features
- input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 PN: GTRA263902FC
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = -6.0 V, ƒ = 2690 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
32
80
28
Efficiency
60
24
40
20
Gain
20
16
0
12
-20
8
-40
4
0 25
PAR @ 0.01% CCDF
-60
gtra263902fc_g1
-80
30 35 40 45 50 55
Average Output Power (dBm)
Feat.
GTRA263902FC Datasheet
