GTRA263902FC Description
The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applications.
GTRA263902FC Key Features
- GaN on SiC HEMT technology
- Input matched
- Typical Pulsed CW performance, 2690 MHz, 48 V, bined outputs
- Output power at P3dB = 370 W
- Efficiency = 70%
- Gain = 15 dB
- Capable of handling 10:1 VSWR @48 V, 56 W (CW) output power
- Human Body Model class 1A (per ANSI/ESDA/ JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS pliant