GTRA362002FC Description
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
GTRA362002FC Key Features
- 60 gtra362002fc_g1
- GaN on SiC HEMT technology
- Input matched
- Asymmetrical Doherty design
- Main: P3dB = 85 W Typ
- Peak: P3dB = 115 W Typ
- Typical Pulsed CW performance, 3500 MHz, 48 V, bined outputs
- Output power at P3dB = 200 W
- Efficiency = 60%
- Gain = 12.5 dB