Description
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
Features
- input matching, high efficiency, and a thermally-enhanced package with earless flange. GTRA362002FC Package H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 110 mA, VGS(PEAK) = -5.5 V, ƒ = 3600 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
24
60
Efficiency
20
40
Gain
16
20
12
0
8
-20
PAR @ 0.01% CCDF
4
-40
0 32
-60 gtra362002fc_g1
37
42
47
52
Average Output Power (dBm)
Features.
- GaN on SiC HEMT.
GTRA362002FC Datasheet
