GTRA184602FC
GTRA184602FC is Thermally-Enhanced High Power RF GaN on SiC HEMT manufactured by Wolfspeed.
Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805
- 1880 MHz
Description
The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It Features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 150 mA, VGS(PEAK) =
- 5.5 V, ƒ = 1875 MHz, 3GPP WCDMA signal, 10 dB PAR
3.84 MHz bandwidth
Efficiency
Gain
-20
-40
0 25
PAR @ 0.01% CCDF
-60...
