GTRA184602FC Description
The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
GTRA184602FC Key Features
- GaN on SiC HEMT technology
- Input matched
- Asymmetric Doherty design
- Main: P3dB = 160 W Typ
- Peak: P3dB = 300 W Typ
- Typical pulsed CW performance: 48 V, 1845 MHz, 16µsec pulse width, 10% duty cycle (Doherty configuration)
- Output Power: 460 W @ P3dB
- Efficiency: 62% @ POUT = 49 dBm
- Gain: 16 dB @ POUT = 49 dBm
- Capable of handling 10:1 VSWR @48 V, 80 W (CW) output power