Description
The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
Features
- input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 150 mA, VGS(PEAK) =.
- 5.5 V, ƒ = 1875 MHz, 3GPP WCDMA signal, 10 dB PAR
3.84 MHz bandwidth
40
80
35
Efficiency
60
30
40
25
20
20
Gain
0
15
-20
10
-40
5
0 25
PAR @ 0.01% CCDF
-60
g184602fc-gr1a
-80
30 35 40 45 50 55
Average Output Power (dBm)
Features.
GTRA184602FC Datasheet
