Description
The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
Features
- input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 PN: GTRA262802FC
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 100 mA, VGS(PEAK) =.
- 5.0 V, ƒ = 2635 MHz, 3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
28
70
24
Efficiency
50
20
30
16
Gain
10
12
-10
8
-30
PAR @ 0.01% CCDF
4
-50
0 25
gtra262802fc_g1
-70
30 35 40 45 50 55
Average Output Power (dBm)
Fea.
GTRA262802FC Datasheet
