GTRA262802FC Overview
The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
GTRA262802FC Key Features
- GaN on SiC HEMT technology
- Input matched
- Typical pulsed CW performance, 2605 MHz, 48 V, bined outputs, 16 µs pulse width, 10% duty cycle
- Output power at P3dB = 250 W
- Efficiency = 62%
- Gain = 14.4 dB
- Capable of handling 10:1 VSWR @48 V, 38 W (CW) output power
- Human Body Model Class 1A (per ANSI/ESDA/ JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS pliant