GTRA360502M Description
The GTRA360502M houses two GaN-on-SiC power transistor for use in asymmetric Doherty power amplifiers. The device has been designed t for use in munications infrastructure applications from 3,400 MHz to c 3,800 MHz. It operates from a supply voltage of up to 50 volts and delivers a maximum, average output power of 8 watts.
GTRA360502M Key Features
- GaN on SiC HEMT technology
- Asymmetrical Doherty design
- Main: P3dB = 20 W Typ
- Peak: P3dB = 36 W Typ
- Typical pulsed CW performance, 3600 MHz, 48 V, 10 μs bandwidth, 10% duty cycle (Doherty configuration)
- Output power at P3dB = 50 W
- Drain efficiency = 62% @ 50 W
- Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS pliant
- Low thermal resistance