GTRA360502M Datasheet | Wolfspeed

Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 - 3800 MHz Description The GTRA360502M houses two GaN-on-SiC power transistor for use in asymmetric Doherty power amplifiers. The device has been designed t for use in munications infrastructure applications from 3,400 MHz to c 3,800 MHz. It operates from a supply voltage of up to 50 volts and delivers a maximum, average output power of 8 watts. GTRA360502M Package PG-DFN-6.5x7-1 Peak/Average Ratio (dB), Gain (dB) Efficiency (%) du Single-carrier WCDMA Drive-up VDD = 48V, IDQ = 25 mA, VGS(PEAK) = - 4.9 V, o ¦ = 3600 MHz r 3GPP WCDMA signal 10 dB PAR, 3.84 MHz bandwidth p 21 Gain 50 d 15 40...