GTRA374902FC Description
The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
GTRA374902FC Key Features
- GaN on SiC HEMT technology
- Input matched
- Asymmetrical Doherty design
- Main: P3dB = 220 W Typ
- Peak: P3dB = 300 W Typ
- Typical Pulsed CW performance, 3700 MHz, 48 V, Doherty @ P3dB, 10 µs, 10% duty cycle
- Output power = 450 W
- Drain efficiency = 60%
- Gain = 11.5 dB
- Capable of handling 10:1 VSWR @ 48 V, 63 W (WCDMA) output power