GTRA374902FC
GTRA374902FC is Thermally-Enhanced High Power RF GaN on SiC HEMT manufactured by Wolfspeed.
Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600
- 3700 MHz
Description
The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It Features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 250 mA, VGS(PEAK) = -5.8 V, ƒ = 3700 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
Efficiency
Gain
-20
PAR @ 0.01% CCDF
-40
0 35 gtra374902fc_g1
-60
37.5 40 42.5 45...
