GTRA364002FC Description
The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
GTRA364002FC Key Features
- GaN on SiC HEMT technology
- Input matched
- Asymmetrical Doherty design
- Main: P3dB = 170 W Typ
- Peak: P3dB = 230 W Typ
- Typical Pulsed CW performance, 3400 to 3600 MHz, 48 V, bined outputs, Doherty @ P3dB, 10 µs, 10% duty cycle
- Output power = 400 W
- Efficiency = 60 %
- Gain = 14 dB
- Capable of handling 10:1 VSWR @ 48 V, 50 W (WCDMA) output power