Description
The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
Features
- input and output matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 144 mA,
VGS(PEAK) =.
- 6.0 V, ƒ = 4100 MHz, 3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
24
60
Efficiency
20
40
16
Gain
20
12
0
8
-20
4
0 27
PAR @ 0.01% CCDF
-40
32
37
42
gtra412852fc-gr1a
-60
47
Average Output Power (dBm)
Features.
GTRA412852FC Datasheet
