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GTRA412852FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

General Description

The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Key Features

  • input and output matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 144 mA, VGS(PEAK) =.
  • 6.0 V, ƒ = 4100 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 Efficiency 20 40 16 Gain 20 12 0 8 -20 4 0 27 PAR @ 0.01% CCDF -40 32 37 42 gtra412852fc-gr1a -60 47 Average Output Power (dBm) Features.

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Datasheet Details

Part number GTRA412852FC
Manufacturer Wolfspeed
File Size 960.81 KB
Description Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet download datasheet GTRA412852FC Datasheet

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GTRA412852FC Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz Description The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobi...

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on The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 144 mA, VGS(PEAK) = –6.0 V, ƒ = 4100 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 Efficiency 20 40 16 Gain 20 12 0 8 -20 4 0 27 PAR @ 0.

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