GTRA374902FC Thermally-Enhanced High Power RF GaN on SiC HEMT

Wolfspeed

Description

GTRA374902FC Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 * 3700 MHz .
The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applicati.

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Datasheet Specifications

Part number: GTRA374902FC
Manufacturer: Wolfspeed
File Size: 453.34 KB
Datasheet: GTRA374902FC-Wolfspeed.pdf
Description: Thermally-Enhanced High Power RF GaN on SiC HEMT

Features

* input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 250 mA, VGS(PEAK) = -5.8 V, ƒ = 3700 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW

GTRA374902FC Distributors

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GTRA374902FC Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed

Wolfspeed GTRA374902FC-like datasheet