Datasheet Details
- Part number
- GTRA374902FC
- Manufacturer
- Wolfspeed
- File Size
- 453.34 KB
- Datasheet
- GTRA374902FC-Wolfspeed.pdf
- Description
- Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA374902FC Description
GTRA374902FC Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 * 3700 MHz .
The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applicati.
GTRA374902FC Features
* input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 250 mA, VGS(PEAK) = -5.8 V, ƒ = 3700 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
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