Datasheet Details
- Part number
- GTRB264318FC
- Manufacturer
- MACOM
- File Size
- 520.53 KB
- Datasheet
- GTRB264318FC-MACOM.pdf
- Description
- Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB264318FC Description
GTRB264318FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 2500 * 2700 MHz .
The GTRB264318FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applicati.
GTRB264318FC Features
* internal matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VCC = 48 V, IDQ = 150 mA,
VGS(PEAK) =
* 5.6 V, ƒ = 2690 MHz 3GPP WCDMA signal,
10 dB PAR, 3.84 M
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