GTRB264318FC Datasheet, Hemt, MACOM

GTRB264318FC Features

• Hemt internal matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCD

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Part number:

GTRB264318FC

Manufacturer:

MACOM

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520.53kb

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📄 Datasheet

Description:

Thermally-enhanced high power rf gan on sic hemt. The GTRB264318FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power am

GTRB264318FC Application

• Applications It features internal matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 P

TAGS

GTRB264318FC

MACOM

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