MACOM Datasheet | Specifications & PDF Download

H-183-4 Microwave Hybrid Junction, 30 MHz - 3 GHz Features  0o - 180o Hybrid  Seven Octave Frequency Range C-11 Rev. V2 Guaranteed Specifications

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T-1000 Two-Way Power Divider, 10 - 1000 MHz Features C-7  Broadband Frequency Range  Isolation - 25 dB Min  Insertion Loss - 0.8 dB Max Rev. V

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Si High Voltage Capacitors 1000 V MACOM KV CAPS™ Features • High Working Voltage: 1000 V • Wide Range of Capacitance: 3.6 - 1300 pF • Excellent Stabil

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Si High Voltage Capacitors 1000 V MACOM KV CAPS™ Features • High Working Voltage: 1000 V • Wide Range of Capacitance: 3.6 - 1300 pF • Excellent Stabil

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Confidential & Proprietary Power Management Bias Controller/Sequencer Supply :-6V, +5V MABC-11040B Rev V2 Features • Quad Output I2C programmable an

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CG2H40010 10 W, DC - 8 GHz, RF Power GaN HEMT Description The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

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Si High Voltage Capacitors 1000 V MACOM KV CAPS™ Features • High Working Voltage: 1000 V • Wide Range of Capacitance: 3.6 - 1300 pF • Excellent Stabil

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GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz Features • GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broad

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MLPNC-7103 NLTL Comb Generator Features  Ultra-Low Phase Noise  Variable Input Frequency 600 - 1500 MHz  Variable Input Power from 19 - 24 dBm  O

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Silicon Limiter Diodes Features • Low Insertion Loss and Noise Figure • High Peak and Average Operating Power • Various P1dB Compression Powers • Au D

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A79 / SMA79 Cascadable Amplifier 5 to 300 MHz Rev. V3 Features  HIGH DYNAMIC RANGE: +116 DB/1 MHz  HIGH OUTPUT POWER: +22 dBm (TYP.)  HIGH THIRD

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CGHV1F025S 25 W, DC - 15 GHz, 40 V, GaN HEMT Description The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

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CMPA2738060F 60 W, 2.7 - 3.8 GHz, GaN MMIC, Power Amplifier Description The CMPA2738060F is a packaged, high-power MMIC amplifier producing 85W of sat

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MSW2022-202 SP2T PIN Diode Switch Features  Wide Frequency Range: 50 MHz to 1 GHz  Surface Mount SP2T Switch in Compact Outline: 8 mm L x 5 mm W x 2

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GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz Features • GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broad

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High Peak Power Surface Mount Limiter 2 - 20 GHz Features • Operating Frequency: 2 - 20 GHz • Peak Power Operation: 58 dBm @ 13 GHz • Insertion Loss:

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GaN Amplifier 28 V, 5 W 20 - 1500 MHz Features • GaN on Si HEMT D-Mode Amplifier • Suitable for Linear & Saturated Applications • Broadband Operation

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Solderable GaAs Constant Gamma Flip-Chip Varactor Diode Features • Usable Past 70 GHz • Constant Gamma for Linear Tuning • Low Parasitic Capacitance •

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Si High Voltage Capacitors 1000 V MACOM KV CAPS™ Features • High Working Voltage: 1000 V • Wide Range of Capacitance: 3.6 - 1300 pF • Excellent Stabil

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High Power Switch with Integrated Bias Controller 0.5 - 7.2 GHz Features • Broadband Performance • Low Loss: TX = 0.35 dB @ 3.5 GHz RX = 0.4 dB @ 3.5

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