MACOM Datasheet | Specifications & PDF Download

Si High Voltage Capacitors 1000 V MACOM KV CAPS™ Features • High Working Voltage: 1000 V • Wide Range of Capacitance: 3.6 - 1300 pF • Excellent Stabil

(18 views)

Confidential & Proprietary Power Management Bias Controller/Sequencer Supply :-6V, +5V MABC-11040B Rev V2 Features • Quad Output I2C programmable an

(17 views)

Single Junction Drop-In Isolator 800MHz, 900MHz, 1800MHz, 1900MHz, 2100MHz Features • 20dB Isolation • 0.35dB Insertion Loss • Low cost package • Cus

(16 views)

Si High Voltage Capacitors 1000 V MACOM KV CAPS™ Features • High Working Voltage: 1000 V • Wide Range of Capacitance: 3.6 - 1300 pF • Excellent Stabil

(16 views)

GTRB424908FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3700 – 4000 MHz Description The GTRB424908FC/1 is a 450-watt (P3dB) GaN o

(14 views)

Single Junction Drop-In Isolator 800MHz, 900MHz, 1800MHz, 1900MHz, 2100MHz Features • 20dB Isolation • 0.35dB Insertion Loss • Low cost package • Cus

(14 views)

A87 / SMA87 Cascadable Amplifier 10 to 400 MHz Rev. V2 Features  HIGH OUTPUT LEVEL: +17.5 dBm (TYP.)  HIGH THIRD ORDER I.P.: +33 dBm (TYP.)  WID

(13 views)

Binary Chip Capacitors Features • High Reliability Silicon Nitride/Oxide Dielectric • Low Loss • Long Term Reliability & Stability • RoHS* Compliant

(13 views)

A79 / SMA79 Cascadable Amplifier 5 to 300 MHz Rev. V3 Features  HIGH DYNAMIC RANGE: +116 DB/1 MHz  HIGH OUTPUT POWER: +22 dBm (TYP.)  HIGH THIRD

(13 views)

CG2H40010 10 W, DC - 8 GHz, RF Power GaN HEMT Description The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

(13 views)

A75 / SMA75 Cascadable Amplifier 5 to 500 MHz Features  HIGH GAIN: 21.0 dB (TYP.)  LOW NOISE: 2.1 dB (TYP.)  MEDIUM OUTPUT LEVEL: +9 dBm (TYP.) 

(13 views)

Si High Voltage Capacitors 1000 V MACOM KV CAPS™ Features • High Working Voltage: 1000 V • Wide Range of Capacitance: 3.6 - 1300 pF • Excellent Stabil

(13 views)

Binary Chip Capacitors Features • High Reliability Silicon Nitride/Oxide Dielectric • Low Loss • Long Term Reliability & Stability • RoHS* Compliant

(12 views)

(12 views)

CGH40006P 6 W, RF Power GaN HEMT Description The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400

(12 views)

GTRB266908FC Thermally-Enhanced High Power RF GaN on SiC HEMT 630 W, 48 V, 2515 – 2675 MHz Description The GTRB266908FC is a 630-watt (P4dB) GaN on Si

(12 views)

GTRB204402FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 48 V, 1930 – 2020 MHz Description The GTRB204402FC/1 is a 350-watt (P3dB) GaN o

(12 views)

Silicon Limiter Diodes Features • Low Insertion Loss and Noise Figure • High Peak and Average Operating Power • Various P1dB Compression Powers • Au D

(12 views)

Single Junction Drop-In Isolator 800MHz, 900MHz, 1800MHz, 1900MHz, 2100MHz Features • 20dB Isolation • 0.35dB Insertion Loss • Low cost package • Cus

(12 views)

Single Junction Drop-In Isolator 800MHz, 900MHz, 1800MHz, 1900MHz, 2100MHz Features • 20dB Isolation • 0.35dB Insertion Loss • Low cost package • Cus

(12 views)