.
MACOM
1N5819 - Axial Lead Schottky Diode
1N5819 Axial Lead Schottky Diode Features Low Forward Voltage: 550 mV @ IF = 1 A High Reverse Breakdown Voltage: 30 V Hermetically Sealed Glass,.
MACOM
MASW-011154 - SP4T Absorptive Switch
SP4T Absorptive Switch DC - 57 GHz Features • Ultra Wideband: 9 kHz to 57 GHz • Insertion Loss: 2.0 dB @ 18 GHz 2.8 dB @ 40 GHz 4.0 dB @ 57 GHz • Isol.
MACOM
MA4P4006-1041 - PIN Diode
PIN Diode Features • High Power Switching Diode • Low Loss, Low Distortion Design • Rugged, Hermetically Sealed Packaging • Threaded Stud Attachment .
MACOM
MRF317 - The RF Line NPN Silicon Power Transistor
MRF317 The RF Line NPN Silicon Power Transistor 100W, 30-200MHz, 28V Designed primarily for wideband large–signal output amplifier stages in 30–200 MH.
MACOM
MAAL-011161 - Low Phase Noise Amplifier
Low Phase Noise Amplifier 2 - 18 GHz Features • Phase Noise: -169 dBc/Hz @ 10 kHz • Gain: 14 dB • Psat: +25 dBm • Bias Voltage: VCC = +6 V • Bias Cur.
MACOM
MAAM-011167 - Medium Power Amplifier
MAAM-011167 Medium Power Amplifier 71 - 86 GHz Features 4 Stage Driver Amplifier for E Band 18 dB Gain 10 dB Input and Output Match 24 dBm Sat.
MACOM
MADL-011116 - Diode Limiter
Diode Limiter 2 - 40 GHz Features • Peak Power Handling: 10 W • CW Power Handling: 3.5 W • Low Insertion Loss: 1.4 dB @ 40 GHz • Flat Leakage Power: .
MACOM
CGHV14500F - GaN HEMT
CGHV14500F 500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems Description The CGHV14500 is a gallium nitride (GaN) high electron mobility transis.
MACOM
MABC-11040B - Power Management Bias Controller/Sequencer
Confidential & Proprietary Power Management Bias Controller/Sequencer Supply :-6V, +5V MABC-11040B Rev V2 Features • Quad Output I2C programmable an.
MACOM
CGH40010 - RF Power GaN HEMT
CGH40010 10 W, DC - 6 GHz, RF Power GaN HEMT Description The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)..
MACOM
MA4AGSW2 - SPDT AlGaAs PIN Diode Switch
SPDT AlGaAs PIN Diode Switch Features • Ultra Broad Bandwidth: 50 MHz to 50 GHz • Functional Bandwidth: 50 MHz to 70 GHz • Insertion Loss: 0.7 dB • Is.
MACOM
MA4E2054 - Surface Mount Low Barrier Schottky Diode
MA4E2054 Series Surface Mount Low Barrier Schottky Diode Features Low IR (<100 nA @ 1 V, <500 nA @ 3 V) Designed for High Volume, Low Cost Detecto.
MACOM
MA4GP907 - GaAs Flip Chip PIN
MA4GP907 GaAs Flip Chip PIN Features Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 ns Switching S.
MACOM
MAAL-011188 - Broadband 2-Stage LNA
Broadband 2-Stage LNA 1 - 6 GHz Features • Broadband 2-Stage LNA • Gain: 35.2 dB @ 2.50 GHz 35.1 dB @ 3.75 GHz 35.2 dB @ 4.70 GHz • Noise Figure: 0.7.
MACOM
MA4E2502 - Silicon Schottky Diode
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes MA4E2502 Series Rev. V4 Features • Extremely Low Parasitic Capacitance & Inductance.
MACOM
MAAP-010512 - Power Amplifier
MAAP-010512 Amplifier, Power, 0.8 W 40.5 - 43.5 GHz Features Gain: 22 dB P1dB: 27 dBm High Linearity, OIP3: 38 dBm Integrated Power Detector .
MACOM
CMPA2735015D - Power Amplifier
CMPA2735015D 15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Description The CMPA2735015D is a gallium nitride (GaN) high electron mobility transistor .
MACOM
CMPA901A035F - Power Amplifier
CMPA901A035F 35 W, 9.0 - 11.0 GHz, GaN MMIC, Power Amplifier Description The CMPA901A035F is a gallium nitride (GaN) high electron mobility transistor.
MACOM
CGHV40050 - GaN HEMT
CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Description The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
MACOM
CGH40120F - RF Power GaN HEMT
CGH40120F 120 W, RF Power GaN HEMT Description The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4.
