MACOM Datasheet | Specifications & PDF Download

SP4T Absorptive Switch DC - 57 GHz Features • Ultra Wideband: 9 kHz to 57 GHz • Insertion Loss: 2.0 dB @ 18 GHz 2.8 dB @ 40 GHz 4.0 dB @ 57 GHz • Isol

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Silicon PIN Diode Limiter Element Features • Low Insertion Loss • Fast Turn-on Time • Wide Bandwidth • RoHS* Compliant Applications • Military, Comme

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Si High Voltage Capacitors 1000 V MACOM KV CAPS™ Features • High Working Voltage: 1000 V • Wide Range of Capacitance: 3.6 - 1300 pF • Excellent Stabil

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Si High Voltage Capacitors 1000 V MACOM KV CAPS™ Features • High Working Voltage: 1000 V • Wide Range of Capacitance: 3.6 - 1300 pF • Excellent Stabil

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A61 / SMA61 Cascadable Amplifier 2 to 6 GHz Features  WIDE BANDWIDTH: 2-6 GHz  MEDIUM OUTPUT LEVEL: +12.5 dBm (TYP.)  LOW NOISE: 3.2 dB (TYP.) De

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A61 / SMA61 Cascadable Amplifier 2 to 6 GHz Features  WIDE BANDWIDTH: 2-6 GHz  MEDIUM OUTPUT LEVEL: +12.5 dBm (TYP.)  LOW NOISE: 3.2 dB (TYP.) De

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A611 / SMA611 Cascadable Amplifier 5 to 700 MHz Rev. V2 Features  LOW NOISE FIGURE: 3.2 dB (TYP.)  HIGH EFFICIENCY: 31 mA (TYP.) at +5 Vdc  HIGH

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A66-3 / SMA66-3 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features  HIGH GAIN - TWO STAGES: 26.0 dB (TYP.)  LOW NOISE: <3.0 dB (TYP.)  HIGH EF

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A70-1 / SMA70-1 Cascadable Amplifier 10 to 250 MHz Rev. V2 Features  AVAILABLE IN SURFACE MOUNT  LOW NOISE: 1.8 dB (TYP.)  HIGH EFFICIENCY: +14

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MLPNC-7103 NLTL Comb Generator Features  Ultra-Low Phase Noise  Variable Input Frequency 600 - 1500 MHz  Variable Input Power from 19 - 24 dBm  O

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2025 Series Directional Couplers, Multi-Octave Features  Flat Frequency Response  Frequency Range: 0.5 - 18 GHz  Multi-Octave Bandwidths  Temperat

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203X Series 3 dB Hybrid Couplers Rev. V4 Features  90o Quadrature Phase  Frequency Range: 0.05 - 18 GHz  Temperature Range: -65o to 125oC  Meet

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203X Series 3 dB Hybrid Couplers Rev. V4 Features  90o Quadrature Phase  Frequency Range: 0.05 - 18 GHz  Temperature Range: -65o to 125oC  Meet

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Binary Chip Capacitors Features • High Reliability Silicon Nitride/Oxide Dielectric • Low Loss • Long Term Reliability & Stability • RoHS* Compliant

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Binary Chip Capacitors Features • High Reliability Silicon Nitride/Oxide Dielectric • Low Loss • Long Term Reliability & Stability • RoHS* Compliant

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A79 / SMA79 Cascadable Amplifier 5 to 300 MHz Rev. V3 Features  HIGH DYNAMIC RANGE: +116 DB/1 MHz  HIGH OUTPUT POWER: +22 dBm (TYP.)  HIGH THIRD

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Binary Chip Capacitors Features • High Reliability Silicon Nitride/Oxide Dielectric • Low Loss • Long Term Reliability & Stability • RoHS* Compliant

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RF Driver Amplifier, 28.5 dBm P1dB 250 - 4000 MHz Features • Broadband Operation • Output P1dB: 28.5 dBm • Output IP3: 42 dBm • Single Supply: 5 V • L

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MAAM-009286 RF Driver Amplifier 250 - 4000 MHz Features  +42 dBm Output IP3  Broadband Operation  Lead-Free SOT-89 Package  Halogen-Free “Green”

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PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in powe

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