1N5711 General Purpose Axial Lead Glass Packaged Schottky Diodes Features  Low Leakage Current  Pico Second Switching Speed  Glass Hermetically S

RF Line NPN Silicon Power Transistor 150 W (PEP), 30 MHz, 28 V Features • Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP) Minimum G

High Peak Power Surface Mount Limiter 2 - 20 GHz Features • Operating Frequency: 2 - 20 GHz • Peak Power Operation: 58 dBm @ 13 GHz • Insertion Loss:

2N3867, 2N3867S & 2N3868, 2N3868S PNP Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF-19500/545  TO-5 Package: 2N3867

MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V Designed for wideband large–signal amplifier and oscillator applications up to

MRF455 The RF Line NPN Silicon Power Transistor 60W, 30MHz, 12.5V Designed for power amplifier applications in industrial, commercial and amateur rad

CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Description The CMPA2560025F is a gallium nitride (GaN) high electron mobility transistor

Confidential & Proprietary Power Management Bias Controller/Sequencer Supply :-6V, +5V MABC-11040B Rev V2 Features • Quad Output I2C programmable an

MRF151G RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features Guaranteed Performance at 175 MHz, 50 V:  Output

MABACT0065 4:1 Transmission Line Transformer 500 - 3000 MHz Features  Surface Mount  Wide Frequency Range  4:1 Impedance Ratio, Unbalanced to Unbal

2025 Series Directional Couplers, Multi-Octave Features  Flat Frequency Response  Frequency Range: 0.5 - 18 GHz  Multi-Octave Bandwidths  Temperat

MRF10031 Microwave Power Silicon NPN Transistor 30W (peak), 960–1215MHz, 36V Features  Guaranteed performance @ 960-1215MHz, 36Vdc  Output power: 3

A24 / SMA24 Cascadable Amplifier 5 to 1500 MHz Rev. V3 Features  HIGH GAIN - TWO STAGES: 20.0 dB (TYP.)  ULTRA LOW PHASE DEVIATION FROM LINEARITY

MRF151 RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features Guaranteed Performance at 30 MHz, 50 V:  Output Po

2026 Series Directional Couplers Ultra-Broadband Rev. V4 Features  Frequency Range: 0.5 - 18 GHz  Standard Coupling Values: 10 and 20 dB  Temper

Binary Chip Capacitors Features • High Reliability Silicon Nitride/Oxide Dielectric • Low Loss • Long Term Reliability & Stability • RoHS* Compliant

Linear RF Power FET 30 W, 175 MHz, 50 V Features • Superior High Order IMD IMD(d3) (30 W PEP): -35 dB IMD(d11) (30 W PEP): -60 dB • Specified 50 V, 30

Low Noise Amplifier 17 - 55 GHz Features • Wideband Performance • Low Noise Figure: 3.2 dB • Gain: 24 dB • PSAT: 22 dBm • OIP3: 27 dBm • Bias Voltage

2026 Series Directional Couplers Ultra-Broadband Rev. V4 Features  Frequency Range: 0.5 - 18 GHz  Standard Coupling Values: 10 and 20 dB  Temper

2026 Series Directional Couplers Ultra-Broadband Rev. V4 Features  Frequency Range: 0.5 - 18 GHz  Standard Coupling Values: 10 and 20 dB  Temper