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CGHV40180F - GaN HEMT

General Description

The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 2.0 GHz Operation.
  • 24 dB Small Signal Gain at 900 MHz.
  • 20 dB Power Gain at 900 MHz.
  • 250 W Typical Output Power at 900 MHz.
  • 75% Efficiency at PSAT.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV40180F 180 W, DC - 2.0 GHz, 50 V, GaN HEMT Description The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40180F ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange package. Package Type: 440223 PN: CGHV40180F Typical Performance Over 800 MHz - 1000 MHz (TC = 25ºC), 50 V Parameter Small Signal Gain Gain @ PIN 34 dBm Output Power @ PIN 34 dBm EFF @ PIN 34 dBm 800 MHz 25.6 20.4 275 67 850 MHz 25.2 20.8 302 75 900 MHz 24.9 20.3 279 73 950 MHz 24.4 20.