CGHV40180F Description
The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40180F ideal for linear and pressed amplifier circuits.
CGHV40180F Key Features
- Up to 2.0 GHz Operation
- 24 dB Small Signal Gain at 900 MHz
- 20 dB Power Gain at 900 MHz
- 250 W Typical Output Power at 900 MHz
- 75% Efficiency at PSAT