CGHV40180F Datasheet | MACOM Technology Solutions

180 W, DC - 2.0 GHz, 50 V, GaN HEMT Description The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40180F ideal for linear and pressed amplifier circuits. The transistor is available in a 2-lead flange package. Package Type: 440223 PN: CGHV40180F Typical Performance Over 800 MHz - 1000 MHz (TC = 25ºC), 50 V Parameter Small Signal Gain Gain @ PIN 34 dBm Output Power @ PIN 34 dBm EFF @ PIN 34 dBm 800 MHz...