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CGHV40180F Datasheet Gan Hemt

Manufacturer: MACOM Technology Solutions

Overview: CGHV40180F 180 W, DC - 2.0 GHz, 50 V, GaN HEMT.

General Description

The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40180F ideal for linear and pressed amplifier circuits.

Key Features

  • Up to 2.0 GHz Operation.
  • 24 dB Small Signal Gain at 900 MHz.
  • 20 dB Power Gain at 900 MHz.
  • 250 W Typical Output Power at 900 MHz.
  • 75% Efficiency at PSAT.

CGHV40180F Distributor