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CGHV40180F
180 W, DC - 2000 MHz, 50 V, GaN HEMT
Cree’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40180F ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange package.
PackaPgNe:TCyGpeHsV: 4404108202F3
Typical Performance Over 800 MHz - 1000 MHz (TC = 25˚C), 50 V
Parameter
800 MHz
850 MHz
900 MHz
Small Signal Gain
25.6
25.2
24.9
Gain @ Pin 34 dBm
20.4
20.8
20.
CGHV40180F Datasheet
