Overview: CGHV40180F
180 W, DC - 2000 MHz, 50 V, GaN HEMT
Cree’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40180F ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange package. PackaPgNe:TCyGpeHsV: 4404108202F3 Typical Performance Over 800 MHz - 1000 MHz (TC = 25˚C), 50 V Parameter 800 MHz 850 MHz 900 MHz Small Signal Gain 25.6 25.2 24.9 Gain @ Pin 34 dBm 20.4 20.8 20.3 Output Power @ Pin 34 dBm 275 302 279 EFF @ Pin 34 dBm 67 75 Note: Measured CW in the CGHV40180F-AMP Application circuit. 73 950 MHz 24.4 20.1 257 73 1000 MHz 24.3 20.1 257 71 Units dB dB W % Rev 1.
