CGHV40180P Datasheet | MACOM Technology Solutions

180 W, DC - 2.0 GHz, 50 V, GaN HEMT Description The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain, and wide bandwidth capabilities making the CGHV40180P ideal for linear and pressed amplifier circuits. The transistor is available in a 2-lead pill package. Package Types: 440206 PN’s: CGHV40180P Features - Up to 2.0 GHz operation - 24 dB small signal gain at 900 MHz - 20 dB power gain at 900 MHz - 250 W typical output power at 900 MHz - 75% efficiency...