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CGHV40180P - 18W GaN HEMT

General Description

The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 2.0 GHz operation.
  • 24 dB small signal gain at 900 MHz.
  • 20 dB power gain at 900 MHz.
  • 250 W typical output power at 900 MHz.
  • 75% efficiency at PSAT.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV40180P 180 W, DC - 2.0 GHz, 50 V, GaN HEMT Description The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain, and wide bandwidth capabilities making the CGHV40180P ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead pill package. Package Types: 440206 PN’s: CGHV40180P Features • Up to 2.