CGHV40180P Description
The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain, and wide bandwidth capabilities making the CGHV40180P ideal for linear and pressed amplifier circuits.
CGHV40180P Key Features
- Up to 2.0 GHz operation
- 24 dB small signal gain at 900 MHz
- 20 dB power gain at 900 MHz
- 250 W typical output power at 900 MHz
- 75% efficiency at PSAT
CGHV40180P Applications
- Up to 2.0 GHz operation