| Part Number | CGHV40180F Datasheet |
|---|---|
| Manufacturer | Cree |
| Overview |
CGHV40180F
180 W, DC - 2000 MHz, 50 V, GaN HEMT
Cree’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers.
APPLICATIONS
* Up to 2000 MHz Operation * 24 dB Small Si. |
CGHV40180F Datasheet and Specifications PDF
The CGHV40180F is a GaN HEMT.
Key Specifications
| Part Number | CGHV40180F Datasheet |
|---|---|
| Description | GaN HEMT |
| Manufacturer | MACOM Technology Solutions |
| Overview |
The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety.
* Up to 2.0 GHz Operation * 24 dB Small Signal Gain at 900 MHz * 20 dB Power Gain at 900 MHz * 250 W Typical Output Power at 900 MHz * 75% Efficiency at PSAT Applications * Military Communications * Public Safety VHF-UHF applications * Radar * Medical * Broadband Amplifiers Large Signal Models Ava. |