GTRB206002FC Datasheet, Hemt, MACOM

GTRB206002FC Features

• Hemt high efficiency, and a thermally-enhanced package with earless flange. GTRB206002FC/1 Package H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VD

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Part number:

GTRB206002FC

Manufacturer:

MACOM

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📄 Datasheet

Description:

Thermally-enhanced high power rf gan on sic hemt. The GTRB206002FC/1 is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellul

GTRB206002FC Application

• Applications It features high efficiency, and a thermally-enhanced package with earless flange. GTRB206002FC/1 Package H-37248C-4 Peak/Average Ra

TAGS

GTRB206002FC

MACOM

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