GTRB206002FC Thermally-Enhanced High Power RF GaN on SiC HEMT

MACOM

Description

GTRB206002FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 48 V, 1930 * 2020 MHz .
The GTRB206002FC/1 is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifie.

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Datasheet Specifications

Part number: GTRB206002FC
Manufacturer: MACOM
File Size: 695.42 KB
Datasheet: GTRB206002FC-MACOM.pdf
Description: Thermally-Enhanced High Power RF GaN on SiC HEMT

Features

* high efficiency, and a thermally-enhanced package with earless flange. GTRB206002FC/1 Package H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 600 mA, VGS(PEAK) = -5.8 V, ƒ = 2020 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 32 28

GTRB206002FC Distributors

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GTRB206002FC Thermally-Enhanced High Power GaN SiC HEMT MACOM

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