GTRB204402FC
MACOM
904.05kb
Thermally-enhanced high power rf gan on sic hemt. The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellul
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e s t .
1 9 0 0
Instrumentation and Control
Gastransmitter
GTR 210
ADOS GmbH Instrumentation and Control P.O. Box 500 444 · 52088 Aachen · FRG Tr.
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