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GTRB204402FC Datasheet - MACOM

GTRB204402FC, Thermally-Enhanced High Power RF GaN on SiC HEMT

GTRB204402FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 48 V, 1930 * 2020 MHz .
The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifie.
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GTRB204402FC-MACOM.pdf

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Datasheet Details

Part number:

GTRB204402FC

Manufacturer:

MACOM

File Size:

904.05 KB

Description:

Thermally-Enhanced High Power RF GaN on SiC HEMT

Features

* high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 150 mA, VGS(Peak) = -5.5 V, ƒ = 2020 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 40 35 30 25

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