Datasheet Details
- Part number
- GTRB204402FC
- Manufacturer
- MACOM
- File Size
- 904.05 KB
- Datasheet
- GTRB204402FC-MACOM.pdf
- Description
- Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB204402FC Description
GTRB204402FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 48 V, 1930 * 2020 MHz .
The GTRB204402FC/1 is a 350-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifie.
GTRB204402FC Features
* high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 150 mA, VGS(Peak) = -5.5 V,
ƒ = 2020 MHz, 3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
40 35 30 25
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