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GTRA262802FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

GTRA262802FC Description

GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 * 2690 MHz .
The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applicati.

GTRA262802FC Features

* input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 PN: GTRA262802FC Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 100 mA, VGS(PEAK) =
* 5.0 V, ƒ = 2635 MHz, 3GPP WCDMA signal

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Datasheet Details

Part number
GTRA262802FC
Manufacturer
Wolfspeed
File Size
508.67 KB
Datasheet
GTRA262802FC-Wolfspeed.pdf
Description
Thermally-Enhanced High Power RF GaN on SiC HEMT

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Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed
Wolfspeed GTRA262802FC-like datasheet