Wolfspeed Datasheet | Pinout, Features, Price Comparison & PDF

WAS350M12BM3, 5 WAS350M12BM3T 1200 V, 350 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

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CAS175M12BM3, 5 CAS175M12BM3T 1200 V, 175 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • Ultra Low

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WAS530M12BM3, 5 WAS530M12BM3T 1200 V, 530 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

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WAS175M12BM3, 5 WAS175M12BM3T 1200 V, 175 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

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C3M0021120D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • High bl

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CGHV14800F1 DC-1.4 GHz, 800 W GaN Transistor Description Wolfspeed’s CGHV14800F1 is an 800W packaged, partially-matched transistor utilizing Wolfspeed

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C4D05120A 4th Generation 1200 V, 5 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Ba

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GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Description The GTRA364002FC is a 400-watt (PSAT) GaN on S

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CAS310M17BM3, 5 CAS310M17BM3T 1700 V, 310 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • Ultra

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C4D30120H 4th Generation 1200 V, 30 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B

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C3M0900170M 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features Package • Fully isolated package for simplified a

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CGH27030 30 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Description Wolfspeed's CGH27030 is a gallium nitride (GaN) high ele

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C4D10120D 4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky

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C4D08120A 4th Generation 1200 V, 8 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky

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C3M0060065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain (TAB) Features • 3rd Generation SiC

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C4D15120A 4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottk

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C3M0040120J2 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Optimized package w

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WAS310M17BM3, 5 WAS310M17BM3T 1700 V, 310 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

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C4D30120D 4th Generation 1200 V, 30 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky

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C4D40120H 4th Generation 1200 V, 40 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B

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