Datasheet Summary
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Drain (Pin 1, TAB)
Features
- 3rd Generation SiC MOSFET technology
- High blocking voltage with low on-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
Gate (Pin 4)
Driver Source (Pin 3)
Power Source (Pin 2)
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