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C3M0060065J - Silicon Carbide Power MOSFET

Key Features

  • 3rd Generation SiC MOSFET technology.
  • Low inductance package with driver source pin.
  • 7mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant 1234567 G KS S S S S S Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Wolfspeed, Inc. is in the process of.

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C3M0060065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain (TAB) Features • 3rd Generation SiC MOSFET technology • Low inductance package with driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant 1234567 G KS S S S S S Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.