Datasheet Summary
Silicon Carbide Power MOSFET C3MTM MOSFET Technology
N-Channel Enhancement Mode
Drain
Drain (TAB)
Features
- 3rd Generation SiC MOSFET technology
- Low inductance package with driver source pin
- 7mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
1234567 G KS S S S S S
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
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