Datasheet Details
- Part number
- GTRA364002FC
- Manufacturer
- Wolfspeed
- File Size
- 448.65 KB
- Datasheet
- GTRA364002FC-Wolfspeed.pdf
- Description
- Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA364002FC Description
GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 * 3600 MHz .
The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier.
GTRA364002FC Features
* input matching, high efficency, and a themally-enhanced package with earless flange. GTRA364002FC Package H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 220 mA, VGS(PEAK) = -5.8 V,
ƒ = 3600 MHz, 3GPP WCDMA signal,
PAR = 10 dB, 3.84 MH
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