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GTRA364002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

GTRA364002FC Description

GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 * 3600 MHz .
The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier.

GTRA364002FC Features

* input matching, high efficency, and a themally-enhanced package with earless flange. GTRA364002FC Package H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 220 mA, VGS(PEAK) = -5.8 V, ƒ = 3600 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MH

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Datasheet Details

Part number
GTRA364002FC
Manufacturer
Wolfspeed
File Size
448.65 KB
Datasheet
GTRA364002FC-Wolfspeed.pdf
Description
Thermally-Enhanced High Power RF GaN on SiC HEMT

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Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed
Wolfspeed GTRA364002FC-like datasheet