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Thermally-Enhanced

Thermally-Enhanced DataSheet

Infineon

PTFB211503EL - Thermally-Enhanced High Power RF LDMOS FETs

 · 14 Hits include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges.Manufactured with Infineon's adv...
Infineon

PTFB193404F - Thermally-Enhanced High Power RF LDMOS FETs

 · 13 Hits include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, ...
Infineon

PTFB211501F - Thermally-Enhanced High Power RF LDMOS FETs

 · 12 Hits include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. PTFB211501E Package H-36248-2 ...
Wolfspeed

GTVA262701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT

 · 12 Hits input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. GTVA262701FA Package H-87265J-2 Peak/Average Ra...
Wolfspeed

PTRA094858NF - Thermally-Enhanced High Power RF LDMOS FET

 · 12 Hits include input and output match- t ing, high gain and thermally-enhanced package with earless flange. c Manufactured with Wolfspeed's advanced LDMOS pr...
Infineon

PTFA080551F - Thermally-Enhanced High Power RF LDMOS FETs

 · 11 Hits include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devi...
Wolfspeed

GTVA355001EC - Thermally-Enhanced High Power RF GaN on SiC HEMT

 · 11 Hits • GaN on SiC HEMT technology • Broadband internal input and output matching • Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse w...
Wolfspeed

PXAC203302FV - Thermally-Enhanced High Power RF LDMOS FET

 · 10 Hits include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS ...
Infineon

PTFB211503FL - Thermally-Enhanced High Power RF LDMOS FETs

 · 9 Hits include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges.Manufactured with Infineon's adv...
Infineon

PTFC262157FH - Thermally-Enhanced High Power RF LDMOS FET

 · 9 Hits include a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal ...
Infineon Technologies

PTFB182503EL - Thermally-Enhanced High Power RF LDMOS FETs

 · 9 Hits include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infi...
Infineon

PTFA210701F - Thermally-Enhanced High Power RF LDMOS FET

 · 9 Hits include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS proces...
Wolfspeed

PXAC200902FC - Thermally-Enhanced High Power RF LDMOS FET

 · 9 Hits include dual path design, input and output matching, high gain and a thermallyenhanced push-pull package with earless flange. Manufactured with Wolfsp...
Wolfspeed

PXAC241002FC - Thermally-Enhanced High Power RF LDMOS FET

 · 9 Hits include dual-path design, input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's adva...
Wolfspeed

GTRA360502M - Thermally-Enhanced High Power RF GaN on SiC HEMT

 · 9 Hits • GaN on SiC HEMT technology • Asymmetrical Doherty design - Main: P3dB = 20 W Typ - Peak: P3dB = 36 W Typ • Typical pulsed CW performance, 3600 MHz, ...
Wolfspeed

GTRA362002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

 · 8 Hits input matching, high efficiency, and a thermally-enhanced package with earless flange. GTRA362002FC Package H-37248C-4 Peak/Average Ratio, Gain (dB)...
MACOM

GTRB204402FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

 · 8 Hits high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Si...
Wolfspeed

GTVA126001FC - Thermally-Enhanced High Power RF GaN HEMT

 · 7 Hits • GaN on SiC HEMT technology • Input matched • Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output p...
Infineon

PTFB212503FL - Thermally-Enhanced High Power RF LDMOS FETs

 · 7 Hits include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with ...
Infineon

PTFB210801FA - Thermally-Enhanced High Power RF LDMOS FET

 · 7 Hits include input and output matching, high gain and thermally-enhanced packages with earless flanges. Manufactured with Infineon's advanced LDMOS process...
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