.
Infineon
PTFB212503EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w.
Wolfspeed
GTRA262802FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on Si.
Infineon
GTVA261701FA - Thermally-Enhanced High Power RF GaN HEMT
advance specification GTVA261701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTV.
Wolfspeed
GTRA360502M - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Description The GTRA360502M houses two GaN-on-SiC power tra.
Wolfspeed
GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on Si.
Wolfspeed
GTVA126001FC - Thermally-Enhanced High Power RF GaN HEMT
GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on.
Infineon
PTFB210801FA - Thermally-Enhanced High Power RF LDMOS FET
PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in mu.
Infineon
PTFC262808SV - Thermally-Enhanced High Power RF LDMOS FET
PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808SV is a 280-watt LDMOS FET intended f.
Infineon Technologies
PTFA190451E - Thermally-Enhanced High Power RF LDMOS FET
PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz www.DataSheet4U.
Infineon
PTFA041501F - Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The .
Infineon
PTFA092211FL - Thermally-Enhanced High Power RF LDMOS FETs
PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description Th.
Infineon
PTFA210701E - Thermally-Enhanced High Power RF LDMOS FET
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz PTFA210701E PTFA210701F Description The.
Infineon
PTFA210701F - Thermally-Enhanced High Power RF LDMOS FET
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz PTFA210701E PTFA210701F Description The.
Infineon
PTFA261301F - Thermally-Enhanced High Power RF LDMOS FET
PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally.
Infineon
PTFB090901FA - Thermally-Enhanced High Power RF LDMOS FET
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PT.
Infineon
PXAC261212FC - Thermally-Enhanced High Power RF LDMOS FET
PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261212FC is a 120-watt LDMOS FET with an as.
Infineon
GTVA221701FA - Thermally-Enhanced High Power RF GaN HEMT
advance specification GTVA221701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 – 2170 MHz Description The GTV.
CREE
GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on S.
Wolfspeed
GTRA362002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA362002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Description The GTRA362002FC is a 200-watt (P3dB) GaN on S.