GTVA126001FC Features
* GaN on SiC HEMT technology
* Input matched
* Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power (P3dB) = 600 W - Drain efficiency = 65% - Gain = 18 dB
* Capable of withstanding a 10:1 load mismatch (all phase
Datasheet Details
GTVA126001FC, GTVA126001EC
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Thermally-enhanced high power rf gan hemt.
This datasheet PDF includes multiple part numbers: GTVA126001FC, GTVA126001EC.
Please refer to the document for exact specifications by model.
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