GTVA261701FA Datasheet, Hemt, Infineon

GTVA261701FA Features

• Hemt input matching, high efficiency, and a thermally-enhanced package with earless flange. Features
• Input Matched
• Typical Pulsed CW performance, 2690 MHz, 48 V, singl

PDF File Details

Part number:

GTVA261701FA

Manufacturer:

Infineon ↗

File Size:

119.64kb

Download:

📄 Datasheet

Description:

Thermally-enhanced high power rf gan hemt. The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier

GTVA261701FA Application

• Applications It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features
• Input Matched <

TAGS

GTVA261701FA

Infineon

📁 Related Datasheet

GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT (CREE)
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on S.

GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on Si.

GTVA262701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Description The GTVA262701FA is a 270-watt GaN on SiC high.

GTVA263202FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)
GTVA263202FC Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Description The GTVA263202FC is a 340-watt (P3dB) GaN on S.

GTVA212701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT (MACOM)
GTVA212701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Description The GTVA212701FA is a 270-watt GaN on SiC high .

GTVA220701FA - Thermally-Enhanced High Power RF GaN HEMT (Infineon)
advance specification GTVA220701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 70 W, 50 V, 1805 – 2170 MHz Description The GTVA.

GTVA221701FA - Thermally-Enhanced High Power RF GaN HEMT (Infineon)
advance specification GTVA221701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 – 2170 MHz Description The GTV.

GTVA104001FA - High Power RF GaN (Wolfspeed)
GTVA104001FA Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 50 V, DC - 1.4 GHz Description The GTVA104001FA is a 400-watt GaN on SiC high el.

GTVA107001EC - High Power RF GaN (Wolfspeed)
GTVA107001EC/FC High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz Description The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high el.

GTVA107001FC - High Power RF GaN (Wolfspeed)
GTVA107001EC/FC High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz Description The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high el.