GTVA261701FA Datasheet - Infineon

GTVA261701FA, Thermally-Enhanced High Power RF GaN HEMT

advance specification GTVA261701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 2620 * 2690 MHz .
The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

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Datasheet Details

Part number:

GTVA261701FA

Manufacturer:

Infineon ↗

File Size:

119.64 KB

Description:

Thermally-Enhanced High Power RF GaN HEMT

Features

* input matching, high efficiency, and a thermally-enhanced package with earless flange. Features
* Input Matched
* Typical Pulsed CW performance, 2690 MHz, 48 V, single side - Output power at P3dB = 170 W - Efficiency = 72% - Gain = 16 dB
* GaN HEMT technology
* H

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