Datasheet Details
- Part number
- GTVA212701FA
- Manufacturer
- MACOM
- File Size
- 544.42 KB
- Datasheet
- GTVA212701FA-MACOM.pdf
- Description
- Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA212701FA Description
GTVA212701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 * 2200 MHz .
The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band.
GTVA212701FA Features
* input matching, high efficiency, and a thermally-enhanced earless package. Package Types: H-87265J-2
Peak/Average Ratio (dB), Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 320 mA, ƒ = 2170 MHz 3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
24
60
Gain
20
40
16
2
📁 Related Datasheet
📌 All Tags
GTVA212701FA Stock/Price