GTVA212701FA Datasheet, Hemt, MACOM

GTVA212701FA Features

• Hemt input matching, high efficiency, and a thermally-enhanced earless package. Package Types: H-87265J-2 Peak/Average Ratio (dB), Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up V

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GTVA212701FA

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MACOM

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📄 Datasheet

Description:

Thermally-enhanced high power rf gan on sic hemt. The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It

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GTVA212701FA

MACOM

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