Description
The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band.
Features
- GaN on SiC HEMT technology.
- Input matched.
- Typical pulsed CW performance (class AB), 1200 MHz, 50 V,
300 μs pulse width, 10% duty cycle.
- Output power P3dB = 600 W.
- Drain efficiency = 65%.
- Gain = 18 dB.
- Capable of withstanding a 10:1 load mismatch (all phase
angles) at 600 W peak power under pulse conditions: 300 μs pulse width, 10% duty cycle, VDD = 50 V, IDQ = 100 mA.
- Human body model class 1 C (per ANSI/ESDA/.
