GTVA221701FA - Thermally-Enhanced High Power RF GaN HEMT

Infineon

GTVA221701FA Description

advance specification GTVA221701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 * 2170 MHz .
The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

GTVA221701FA Features

* input matching, high efficiency, and a thermally-enhanced package with earless flange. Features
* Input matched
* Typical Pulsed CW performance, 1805 MHz, 48 V, single side - Output power at P3dB = 200 W - Efficiency = 70% - Gain = 18 dB
* Capable of handling 10:1 VSWR @4

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GTVA221701FA Datasheet Preview — Preview of GTVA221701FA PDF

Datasheet Details

Part number: GTVA221701FA
Manufacturer: Infineon ↗
File Size: 113.71 KB
Datasheet: GTVA221701FA-Infineon.pdf
Description: Thermally-Enhanced High Power RF GaN HEMT

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Thermally-Enhanced High Power GaN HEMT Infineon

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