GTVA221701FA Datasheet - Infineon

GTVA221701FA Thermally-Enhanced High Power RF GaN HEMT

GTVA221701FA Features

* input matching, high efficiency, and a thermally-enhanced package with earless flange. Features

* Input matched

* Typical Pulsed CW performance, 1805 MHz, 48 V, single side - Output power at P3dB = 200 W - Efficiency = 70% - Gain = 18 dB

* Capable of handling 10:1 VSWR @4

Datasheet Details

GTVA221701FA

113.71 KB

Thermally-enhanced high power rf gan hemt.

📁 Related Datasheet

GTVA220701FA Thermally-Enhanced High Power RF GaN HEMT (Infineon)

GTVA212701FA Thermally-Enhanced High Power RF GaN on SiC HEMT (MACOM)

GTVA261701FA Thermally-Enhanced High Power RF GaN HEMT (Infineon)

GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT (CREE)

GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTVA263202FC Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTVA104001FA High Power RF GaN (Wolfspeed)

TAGS

GTVA221701FA Distributor