GTVA221701FA Datasheet, Hemt, Infineon

GTVA221701FA Features

• Hemt input matching, high efficiency, and a thermally-enhanced package with earless flange. Features
• Input matched
• Typical Pulsed CW performance, 1805 MHz, 48 V, singl

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GTVA221701FA

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Infineon ↗

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📄 Datasheet

Description:

Thermally-enhanced high power rf gan hemt. The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier

GTVA221701FA Application

• Applications It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features
• Input matched <

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GTVA221701FA

Infineon

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