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GTVA221701FA

Thermally-Enhanced High Power RF GaN HEMT

GTVA221701FA Features

* input matching, high efficiency, and a thermally-enhanced package with earless flange. Features

* Input matched

* Typical Pulsed CW performance, 1805 MHz, 48 V, single side - Output power at P3dB = 200 W - Efficiency = 70% - Gain = 18 dB

* Capable of handling 10:1 VSWR @4

GTVA221701FA Datasheet (113.71 KB)

Preview of GTVA221701FA PDF

Datasheet Details

Part number:

GTVA221701FA

Manufacturer:

Infineon ↗

File Size:

113.71 KB

Description:

Thermally-enhanced high power rf gan hemt.

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GTVA221701FA Thermally-Enhanced High Power GaN HEMT Infineon

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