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GTVA107001FC

High Power RF GaN

GTVA107001FC Features

* GaN on SiC HEMT technology

* Input matched

* Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10% duty cycle - Output power P3dB = 890 W - Drain efficiency = 75% - Gain = 18 dB

* Capable of withstanding a 10:1 load mismatch (all phase an

GTVA107001FC General Description

The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. GTVA107001EC Package H-36248-2 Gain (dB), Efficiency (%) Power Sweep, Pulsed CW VDS = 50 V, IDQ = 100 mA, 128 µs pulse width, 10% duty cycle, power optimi.

GTVA107001FC Datasheet (632.40 KB)

Preview of GTVA107001FC PDF

Datasheet Details

Part number:

GTVA107001FC

Manufacturer:

Wolfspeed

File Size:

632.40 KB

Description:

High power rf gan.

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GTVA107001FC High Power GaN Wolfspeed

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