GTVA220701FA Datasheet - Infineon

GTVA220701FA, Thermally-Enhanced High Power RF GaN HEMT

advance specification GTVA220701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 70 W, 50 V, 1805 * 2170 MHz .
The GTVA220701FA is a 70-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

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Datasheet Details

Part number:

GTVA220701FA

Manufacturer:

Infineon ↗

File Size:

119.48 KB

Description:

Thermally-Enhanced High Power RF GaN HEMT

Features

* input matching, high efficiency, and a thermally-enhanced package with earless flange. Features
* Input matched
* Typical Pulsed CW performance, 2170 MHz, 48 V - Output power at P3dB = 70 W - Efficiency = 70% - Gain = 20 dB
* Capable of handling 10:1 VSWR @48 V, 70 W (CW)

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