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GTVA263202FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

GTVA263202FC Description

GTVA263202FC Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 * 2690 MHz .
The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applicati.

GTVA263202FC Features

* input matching, high efficiency, and a thermallyenhanced surface-mount package with earless flange. Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA, ƒ = 2690 MHz 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 32 80 28 Gain 24

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Datasheet Details

Part number
GTVA263202FC
Manufacturer
Wolfspeed
File Size
384.80 KB
Datasheet
GTVA263202FC-Wolfspeed.pdf
Description
Thermally-Enhanced High Power RF GaN on SiC HEMT

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Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed
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