Datasheet Details
- Part number
- GTVA123501FA
- Manufacturer
- Wolfspeed
- File Size
- 187.83 KB
- Datasheet
- GTVA123501FA-Wolfspeed.pdf
- Description
- Thermally-Enhanced High Power RF GaN
GTVA123501FA Description
GTVA123501FA Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 * 1400 MHz .
The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band.
GTVA123501FA Features
* input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Gain (dB) Efficiency (%)
Power Sweep, Pulsed CW
VDS = 50 V, IDQ = 100 mA 300 μs pulse width, 10% duty cycle
22 21 20 19 18 17 16 15
0
80
70
60
50
40
Gain: 1200 MHz Gain: 1300 MHz
30
Gain:
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