GTVA123501FA Datasheet, Gan, Wolfspeed

GTVA123501FA Features

• Gan input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Gain (dB) Efficiency (%) Power Sweep, Pulsed CW VDS = 50 V, IDQ = 100 mA 300 μs pu

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GTVA123501FA

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Wolfspeed

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📄 Datasheet

Description:

Thermally-enhanced high power rf gan. The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It

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GTVA123501FA

Wolfspeed

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