GaN Datasheet | Specifications & PDF Download

10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS With Various Turns Ratios RoHS-5 peak reflow temperature rating 235°C RoHS-6 peak reflow temperature

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

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QPA3230 GaAs/GaN Power Doubler Hybrid 45MHz to 1218MHz RFMD + TriQuint = Qorvo QPA3230 The QPA3230 is a Hybrid Power Doubler amplifier module. The p

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Manganese Dioxide Type Feature EMC Lead Frame Tantalum wire Tantalum Power Positive Ta2O5 Dielectric C / Ag MnO2 Negative Configuration And Dimens

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polyfet rf devices GX3442 General Description Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for b

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TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

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Features: • 1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operati

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Features n Carbon element n Ganging up to 8 sections available n Knurled, flatted and plain shaft styles n Audio taper option n Tracking error within

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GaN Power Amp Pallet Product Features • Doherty amplifier design • GaN on SiC HEMT • Small and light weight • 50 Ohm Input/Output impedance matched •

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GS61008T Top-side cooled 100 V E-mode GaN transistor Datasheet Features • 100 V enhancement mode power transistor • Top-side cooled configuration • R

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Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 16

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TGA2813-CP 3.1 – 3.6 GHz 100 W GaN Power Amplifier Product Description Qorvo’s TGA2813-CP is a packaged high-power S-Band amplifier fabricated on Qor

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Data Sheet CR 2032 Lithium Manganese Dioxide Type Number …………………….……… 6032 Designation IEC ………………..……….. CR 2032 System ……………………………..…….. Li-Mangane

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Features • 1100V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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KEMET Aluminum Organic Capacitor (AO-CAP) A700 Series Polymer Aluminum Overview The KEMET Aluminum Organic Capacitor (AO-CAP) is a solid state alumin

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GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on

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