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GaN

GaN DataSheet

TRinno

TGAN20N135FD - Field Stop Trench IGBT

 · 138 Hits •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • RoHS ...
TIANBO GANGLIAN ELECTRONICS

HJR-3FF-S-Z - Relay

 · 84 Hits 10A switching capability Small footprint Sealed type available ■ CONTACT DATA Contact Contact Contact Form Material Ratings 1A/1C AgCdO AgSnO 1A:10A ...
TRinno

TGAN40N60F2DS - Field Stop Trench IGBT

 · 39 Hits • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel Operatio...
TRinno

TGAN60N60FD - Field Stop Trench IGBT

 · 29 Hits • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • RoHS ...
TRinno

TGAN30N135FD1 - Field Stop Trench IGBT

 · 27 Hits • 1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • RoHS...
TIANBO GANGLIAN ELECTRONICS

HJR-3FF-S-H - Relay

 · 25 Hits 10A switching capability Small footprint Sealed type available ■ CONTACT DATA Contact Contact Contact Form Material Ratings 1A/1C AgCdO AgSnO 1A:10A ...
RFHIC

HT1818-15M - GaN Hybrid Power Amplifier

 · 21 Hits • E-pHEMT GaAs + GaN on SiC • 2-Stage Amplifier 50ohms Matching • Surface Mount Hybrid Type • Small Size & Mass • High Efficiency Applications • RF S...
ETC

U2G4460-50F2 - GaN high electron mobility transistor

 · 17 Hits .7 CW @ Psat Gp (dB) 9.8 9.2 9.5 ηD (%) 59.4 58.8 58.9 Ids (A) 3.97 3.75 3.57 (TC=25℃， ) Production Fig. 2 Gain, Drain efficiency vs. output p...
TRinno

TGAN40N60FD - Field Stop Trench IGBT

 · 15 Hits • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • RoHS C...
SAFT

BA5360 - 9V Primary lithium manganese dioxide (Li-MnO2) battery

 · 13 Hits ■ A non-replaceable fuse is incorporated in the battery ■ A normally closed thermal fuse (TCO) is incorporated in the battery. It is non-replaceable a...
GaN Systems

GS66516T - Top cooled 650V enhancement mode GaN transistor

 · 12 Hits • 650 V enhancement mode power transistor • Top-side cooled configuration • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM die • Low inductance GaN...
nexperia

GAN7R0-150LBE - GaN FET

 · 12 Hits and benefits • Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output ...
Sony Corporation

CR2032 - Lithium Manganese Dioxide Battery

 · 11 Hits 0 100 1000 1 10 100 Load Load Discharge Characteristics on Pulse Load (Discharge depth 40%) Pulse Load for 15 sec 3.0 Storage Characteristics 4...
Texas Instruments

LMG3411R050 - Integrated GaN Fet Power Stage

 · 11 Hits •1 TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – S...
STMicroelectronics

MASTERGAN3 - High power density 600V Half bridge driver

 · 11 Hits • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration: – QFN 9 x 9 x 1 mm...
Wolfspeed

GTVA262701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT

 · 10 Hits input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. GTVA262701FA Package H-87265J-2 Peak/Average Ra...
TRinno

TGAN40N60F2D - Field Stop Trench IGBT

 · 10 Hits • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • RoHS C...
NINGBO TIANBO GANGLIAN ELECTRONICS

HJR-4102 - Relays

 · 10 Hits 80 320 1280 Max Operate Voltage Min ReleaseVoltage Max ApplicableVoltage VDC VDC VDC 2.25 3.75 0.3 0.5 0.6 0.9 1.2 2.4 4.8 3.9 6.5 7.8 11.7 15.6 31.2 ...
Maxell

CR2032 - Lithium Manganese Dioxide Battery

 · 9 Hits ...
GaN Systems

GS66508P - Bottom-side cooled 650V E-mode GaN transistor

 · 9 Hits • 650 V enhancement mode power switch • Bottom-side cooled configuration • RDS(on) = 50 mΩ • IDS(max) = 30 A • Ultra-low FOM Island Technology® die • ...
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