GaN Datasheet | Specifications & PDF Download

TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

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Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

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10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS With Various Turns Ratios RoHS-5 peak reflow temperature rating 235°C RoHS-6 peak reflow temperature

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Features • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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Features: • 1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operati

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www.DataSheet4U.com NINGBO TIANBO GANGLIAN ELECTRONICS OC., LTD HJR4102 SPECIFICATION FILE NUMBER：T810S-T002A DATE：2004/06/25 ■ CONTACT DATA Contac

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GaN QR BP87618 BP87618 X 650V GaN 60~120W BP87618 COT Adaptive COT mW 150 V BP87618 LPS CS / VCC / BP87618 ESOP-10 30 Brown-in/out

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PCF7930/31/35 Memory organisation Memory structure Control memory flags of block 0 • Password (Bytes 0..6) The password is 56 bits long. If the pas

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Data Sheet CR2032Lithium Manganese Dioxide Battery Model System Nominal Voltage (V) Nominal Capacity (mAh)* Nominal Discharge Current (mA) Operating

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Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is

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LMG2100R044 SNOSDF9B – JULY 2023 – REVISED MARCH 2024 LMG2100R044 100V, 35A GaN Half-Bridge Power Stage 1 Features • Integrated 4.4mΩ half-bridge GaN

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A5G35H120N Airfast RF Power GaN Amplifier Rev. 3 — 18 October 2023 Product data sheet 1 General description This 18 W asymmetrical Doherty RF power

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MPQ1918 100V, High-Frequency, Half-Bridge GaN/MOSFET Driver, AEC-Q100 Qualified DESCRIPTION The MPQ1918 is designed to drive enhancement mode Gallium

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