GaN Datasheet | Specifications & PDF Download

TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

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Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

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10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS With Various Turns Ratios RoHS-5 peak reflow temperature rating 235°C RoHS-6 peak reflow temperature

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TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

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Public IGI60L2727B1M Final datasheet CoolGaNTM Drive HB 600V G5 270 m / 600 V GaN half-bridge with level-shift gate drivers Features • Two 270 m Ga

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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JW1568K 650V Half-Bridge GaN with Gate Driver Preliminary Specifications Subject to Change without Notice DESCRIPTION FEATURES The JW1568K is an a

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RX65T300HS2A 650V GaN Power Transistor (FET) Features • Easy to use, compatible with standard gate drivers • Excellent QG x RDS(on) figure of merit

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GS66508P Bottom-side cooled 650 V E-mode GaN transistor not recommended for new designs- see GS66508B Features • 650 V enhancement mode power switch

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TECHNICAL SPECIFICATION LR626 Chemical System : Alkaline manganese button batteries Model No. : LR626 (LR66 AG4 177) Nominal Dimensions : Ф6.80×2.60

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TDG100E90BEP Bottom-side cooled, 100V E-mode GaN transistor Product Specification Features • 100 V enhancement mode GaN power switch • Bottom-side co

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NV6148C 700V Advanced GaNSlim Power IC NV6148C 1. Features • Integrated gate drive • 3.3V/5V/15V PWM logic input compatible • Programmable accurate

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Preliminary Specifications Subject to Change without Notice JW1565J Offline QR GaN Flyback Converter DESCRIPTION JW1565J is an isolated offline flyb

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T echnical Specification CR2032 Lithium Manganese Dioxide (Li-MnO2) Coin Batteries Dimensions(mm) ENERGY VERY ENDURE 1.TEMPERATURE CHARACTERISTICS

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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QPA1022 ® 8.5 – 11 GHz 4 W GaN Power Amplifier Product Overview Qorvo’s QPA1022 is a packaged, high performance power amplifier fabricated on Qorvo

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QPA4346D 37.5 – 42.5 GHz 6 Watt GaN Power Amplifier Product Overview Qorvo's QPA4346D is a high power MMIC amplifier fabricated on Qorvo's production

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