HJR-3FF-S-Z (TIANBO GANGLIAN ELECTRONICS)
Relay
TIANBO GANGLIAN ELECTRONICS
HJR-3FF
HJR-3FF
SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02
■ Features
10A switching capability Small footpr
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114 views
TGAN20N135FD (TRinno)
Field Stop Trench IGBT
Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio
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82 views
HJR-3FF-S-H (TIANBO GANGLIAN ELECTRONICS)
Relay
TIANBO GANGLIAN ELECTRONICS
HJR-3FF
HJR-3FF
SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02
■ Features
10A switching capability Small footpr
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55 views
TGS822 (Figaro)
detection of Organic Solvent Vapors
10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS
With Various Turns Ratios
RoHS-5 peak reflow temperature rating 235°C RoHS-6 peak reflow temperature
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47 views
TGAN40N60F2DS (TRinno)
Field Stop Trench IGBT
Features
• 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel
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45 views
US18650VTC2 (Sony)
High Power Lithium Ion Manganese Cell
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41 views
CR2032 (EVE)
Lithium Manganese Dioxide Coin Batteries
T echnical Specification
CR2032
Lithium Manganese Dioxide (Li-MnO2) Coin Batteries
Dimensions(mm)
ENERGY VERY ENDURE
1.TEMPERATURE CHARACTERISTICS
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30 views
NV6148C (Navitas)
700V Advanced GaNSlim Power IC
NV6148C
700V Advanced GaNSlim Power IC NV6148C
1. Features
• Integrated gate drive • 3.3V/5V/15V PWM logic input compatible • Programmable accurate
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29 views
TP70H240G4ZS (Renesas)
700V GaN FET
TP70H240G4ZS
700V SuperGaN® GaN FET in TO252-3L (source tab)
Datasheet
Description
The TP70H240G4ZS 700V, 240mΩ Gallium Nitride (GaN) FET is a norma
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29 views
JW1568K (JoulWatt)
GaN transistor
JW1568K
650V Half-Bridge GaN with Gate Driver
Preliminary Specifications Subject to Change without Notice
DESCRIPTION
FEATURES
The JW1568K is an a
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28 views
TGAN40N60FD (TRinno)
Field Stop Trench IGBT
Features
• 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation
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26 views
LMG2100R044 (Texas Instruments)
35A GaN Half-Bridge Power Stage
LMG2100R044
SNOSDF9B – JULY 2023 – REVISED MARCH 2024
LMG2100R044 100V, 35A GaN Half-Bridge Power Stage
1 Features
• Integrated 4.4mΩ half-bridge GaN
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26 views
JW1565J (JoulWatt)
Offline QR GaN Flyback Converter
Preliminary Specifications Subject to Change without Notice
JW1565J
Offline QR GaN Flyback Converter
DESCRIPTION
JW1565J is an isolated offline flyb
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26 views
M108 (STMicroelectronics)
Single Chip Organ
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25 views
GS61004B (GaN Systems)
100V enhancement mode GaN transistor
GS61004B 100V enhancement mode GaN transistor
Datasheet
Features
• 100V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on
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25 views
MK2789CDG (Meraki)
Wide-power supply high-frequency QR integrated GaN power switch
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25 views
JANSG2N7697UFHC (International Rectifier)
Radiation Hardened GaN transistor
IG1NT052N10R (JANSG2N7697UFHC)
Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) 100V, 52A, N-channel, Enhancement mode
PD-98011B
Features
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25 views
TP65H030G4PQS (Renesas)
650V GaN FET
TP65H030G4PQS
650V SuperGaN® GaN FET in TOLL (source tab)
Datasheet
Description
The TP65H030G4PQS 650V, 30mΩ Gallium Nitride (GaN) FET is a normally
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25 views
MS21063 (Genuine Aircraft Hardware)
Nut / Self-locking Gang Channel
Genuine Aircraft Hardware Co.
All original Text, Tables, and Drawings are Copyright 1994-2006 reproduction by permission only.
MS21063
Nut, Self-loc
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24 views
LM33550 (SAFT)
3V Primary lithium-manganese dioxide (Li-MnO2)High power D-size spiral cell
Primary lithium battery LM 33550
3 V Primary High power
lithium-manganese
dioxide
(Li-MnO2)
D-size spiral cell
For applications requesting excel
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23 views