TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS With Various Turns Ratios RoHS-5 peak reflow temperature rating 235°C RoHS-6 peak reflow temperature

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TP70H240G4ZS 700V SuperGaN® GaN FET in TO252-3L (source tab) Datasheet Description The TP70H240G4ZS 700V, 240mΩ Gallium Nitride (GaN) FET is a norma

JW1568K 650V Half-Bridge GaN with Gate Driver Preliminary Specifications Subject to Change without Notice DESCRIPTION FEATURES The JW1568K is an a

IG1NT052N10R (JANSG2N7697UFHC) Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) 100V, 52A, N-channel, Enhancement mode PD-98011B Features

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TP70H300G4LSG 700V SuperGaN® GaN FET in PQFN (source tab) Datasheet Description The TP70H300G4LSG 700V, 240mΩ Gallium Nitride (GaN) FET is a normall

Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation