CCPAK1212 GAN039-650NBB 650 V, 33 mOhm Gallium N.
TIANBO GANGLIAN ELECTRONICS
HJR-3FF-S-Z - Relay
TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr.
TRinno
TGAN20N135FD - Field Stop Trench IGBT
Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
TRinno
TGAN40N60F2DS - Field Stop Trench IGBT
Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel.
TRinno
TGAN60N60FD - Field Stop Trench IGBT
Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
TIANBO GANGLIAN ELECTRONICS
HJR-3FF-S-H - Relay
TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr.
TRinno
TGAN40N60FD - Field Stop Trench IGBT
Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation.
TRinno
TGAN30N135FD1 - Field Stop Trench IGBT
Features: • 1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operati.
TRinno
TGAN40N120FDR - Field Stop Trench IGBT
Features • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
Figaro
TGS822 - detection of Organic Solvent Vapors
10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS With Various Turns Ratios RoHS-5 peak reflow temperature rating 235°C RoHS-6 peak reflow temperature .
TRinno
TGAN30N120FD - Field Stop Trench IGBT
Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati.
JoulWatt
JW1568K - GaN transistor
JW1568K 650V Half-Bridge GaN with Gate Driver Preliminary Specifications Subject to Change without Notice DESCRIPTION FEATURES The JW1568K is an a.
JoulWatt
JW15158D - Offline QR GaN Flyback Converter
JW15158D Offline QR GaN Flyback Converter Preliminary Specifications Subject to Change without Notice DESCRIPTION JW15158D is an isolated offline Fl.
ETC
PCF7935 - (PCF7930 - PCF7935) Memory Organisation
PCF7930/31/35 Memory organisation Memory structure Control memory flags of block 0 • Password (Bytes 0..6) The password is 56 bits long. If the pas.
EVE
CR123A - Lithium Manganese Dioxide Batteries
T echnical Specification CR123A Lithium Manganese Dioxide(Li-MnO2)Batteries ENERGY VERY ENDURE Nominal capacity (10mA, 2.0V off) 1500mAh Nominal vo.
Sony Corporation
CR2032 - Lithium Manganese Dioxide Battery
DATA SHEET Lithium Manganese Dioxide Battery CR2032 Specifications Nominal Voltage Dimensions (mm) Diameter Height 20.0mm 3.20mm 3V 220mAh 0.3mA .
NINGBO TIANBO GANGLIAN ELECTRONICS
HJR-4102 - Relays
www.DataSheet4U.com NINGBO TIANBO GANGLIAN ELECTRONICS OC., LTD HJR4102 SPECIFICATION FILE NUMBER：T810S-T002A DATE：2004/06/25 ■ CONTACT DATA Contac.
ETC
U2G4460-50F2 - GaN high electron mobility transistor
Production U2G4460-50F2 50W，4.4~6GHz， U2G4460-50F2 50W 4.4~6GHz 。 、。， 28V 。 5.8GHz Demo board 1： Ø : 60W Ø : 61.7% 1: 5.7～5.9GHz， VDD=28V, IDQ.
Maxell
CR2032 - Lithium Manganese Dioxide Battery
Data Sheet CR2032Lithium Manganese Dioxide Battery Model System Nominal Voltage (V) Nominal Capacity (mAh)* Nominal Discharge Current (mA) Operating.
