TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS With Various Turns Ratios RoHS-5 peak reflow temperature rating 235°C RoHS-6 peak reflow temperature

Genuine Aircraft Hardware Co. All original Text, Tables, and Drawings are Copyright 1994-2006 reproduction by permission only. MS21063 Nut, Self-loc

T echnical Specification CR2032 Lithium Manganese Dioxide (Li-MnO2) Coin Batteries Dimensions(mm) ENERGY VERY ENDURE 1.TEMPERATURE CHARACTERISTICS

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TP120H058WS 1200V GaN FET in TO-247 (source tab) Preliminary Description The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off d

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TP70H240G4ZS 700V SuperGaN® GaN FET in TO252-3L (source tab) Datasheet Description The TP70H240G4ZS 700V, 240mΩ Gallium Nitride (GaN) FET is a norma

TP65H030G4PQS 650V SuperGaN® GaN FET in TOLL (source tab) Datasheet Description The TP65H030G4PQS 650V, 30mΩ Gallium Nitride (GaN) FET is a normally

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www.DataSheet4U.com NINGBO TIANBO GANGLIAN ELECTRONICS OC., LTD HJR4102 SPECIFICATION FILE NUMBER：T810S-T002A DATE：2004/06/25 ■ CONTACT DATA Contac

TP65H035G4WS 650V SuperGaN™ FET in TO-247 (source tab) Description The TP65H035G4WS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device u

JW15158B ORDER INFORMATION DEVICE1) JW15158BHSOPC#TR Notes： PACKAGE HSOP-7 TOP MARKING2) JW15158B YW□□□□□ JW 1) JW 2) Line1: # TR Tape and Reel

TP65H030G4PWS 650V SuperGaN® GaN FET in TO-247 (source tab) Datasheet Description The TP65H030G4PWS 650V, 30mΩ Gallium Nitride (GaN) FET is a normal