GTVA126001EC Datasheet, Hemt, MACOM

GTVA126001EC Features

• Hemt
• GaN on SiC HEMT technology
• Input matched
• Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle
• Output powe

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Part number:

GTVA126001EC

Manufacturer:

MACOM

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430.25kb

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📄 Datasheet

Description:

600w high power rf gan hemt. The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz freque

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GTVA126001EC

MACOM

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