PTFC210202FC Datasheet - Wolfspeed

PTFC210202FC, Thermally-Enhanced High Power RF LDMOS FET

PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 * 2200 MHz .
The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 t MHz f.

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PTFC210202FC-Wolfspeed.pdf

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Datasheet Details

Part number:

PTFC210202FC

Manufacturer:

Wolfspeed

File Size:

1.10 MB

Description:

Thermally-Enhanced High Power RF LDMOS FET

Features

* Input matched
* Typical CW performance, 2170 MHz, 28 V, combined outputs - Output power at P1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB
* Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power
* Integrated ESD protection : Human Body Model, Class 1C (per JES

Applications

* in the 2110 to 2170 t MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS c process, this device provides excellent thermal performance and superior reliability. du Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz o 3GPP WCDMA signal, r PAR = 7.5 dB, 3.84 MHz BW p

PTFC210202FC Distributors

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PTFC210202FC Thermally-Enhanced High Power LDMOS FET Wolfspeed

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