PTFC270051M Datasheet - Infineon

PTFC270051M, High Power RF LDMOS Field Effect Transistor

PTFC270051M High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 * 2700 MHz .
The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power ampliﬁer applications with frequencies from 900 MHz to 2700 MHz.

datasheet Preview Page 1 from Datasheet4u.com

PTFC270051M-Infineon.pdf

PTFC270051M Datasheet Preview — Preview of PTFC270051M PDF

Datasheet Details

Part number:

PTFC270051M

Manufacturer:

Infineon ↗

File Size:

284.20 KB

Description:

High Power RF LDMOS Field Effect Transistor

Features

* Unmatched
* Typical CW performance, 940 MHz, 28 V - Output power (P1dB) = 6.5 W - Gain = 23 dB - Efﬁciency = 62%
* Typical CW performance, 2170 MHz, 28 V - Output power (P1dB) = 7.3 W - Gain = 20.3 dB - Efﬁciency = 60%
* Typical CW performance, 2655 MHz, 28 V - Outp

Applications

* with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efﬁciency and linearity performance in a small overmolded plastic package. PTFC270051M Package PG-SON-10 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 d

PTFC270051M Distributors

📁 Related Datasheet

PTFC270101M PTFC101C1G0 PTF PTF080101 PTF080101S PTF080451

📌 All Tags

PTFC270051M High Power LDMOS Field Effect Transistor Infineon

Infineon PTFC270051M-like datasheet