PTFC270051M High Power RF LDMOS Field Effect Transistor

Infineon

Description

PTFC270051M High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 * 2700 MHz .
The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power ampliﬁer applications with frequencies from 900 MHz to 2700 MHz.

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Datasheet Specifications

Part number: PTFC270051M
Manufacturer: Infineon ↗
File Size: 284.20 KB
Datasheet: PTFC270051M-Infineon.pdf
Description: High Power RF LDMOS Field Effect Transistor

Features

* Unmatched
* Typical CW performance, 940 MHz, 28 V - Output power (P1dB) = 6.5 W - Gain = 23 dB - Efﬁciency = 62%
* Typical CW performance, 2170 MHz, 28 V - Output power (P1dB) = 7.3 W - Gain = 20.3 dB - Efﬁciency = 60%
* Typical CW performance, 2655 MHz, 28 V - Outp

Applications

* with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efﬁciency and linearity performance in a small overmolded plastic package. PTFC270051M Package PG-SON-10 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 d

PTFC270051M Distributors

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PTFC270051M High Power LDMOS Field Effect Transistor Infineon

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