PTFC270051M
PTFC270051M is High Power RF LDMOS Field Effect Transistor manufactured by Infineon.
Description
The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.
PTFC270051M Package PG-SON-10
Gain (d B) Drain Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 m A
3GPP WCDMA signal, 8 d B PAR, 10 MHz carrier spacing, 3.84 MHz BW
Gain 21
60 50
20 40
19 30
18 Efficiency 17
2110 MHz 2140 MHz 2170 MHz
20 10
16 c270051m-gr1.3
22 24 26 28 30 32 34 36 38 40
Output Power (d Bm)
Features
- Unmatched
- Typical CW performance, 940 MHz, 28 V
- Output power (P1d B) = 6.5 W
- Gain = 23 d B
- Efficiency = 62%
- Typical CW performance, 2170 MHz, 28 V
- Output power (P1d B) = 7.3 W
- Gain = 20.3 d B
- Efficiency = 60%
- Typical CW performance, 2655 MHz, 28 V
- Output power (P1d...
