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PTFC270051M

High Power RF LDMOS Field Effect Transistor

PTFC270051M Features

* Unmatched

* Typical CW performance, 940 MHz, 28 V - Output power (P1dB) = 6.5 W - Gain = 23 dB - Efficiency = 62%

* Typical CW performance, 2170 MHz, 28 V - Output power (P1dB) = 7.3 W - Gain = 20.3 dB - Efficiency = 60%

* Typical CW performance, 2655 MHz, 28 V - Outp

PTFC270051M General Description

The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. PTFC270051M Package PG-SON-10 Gain (dB) Drain.

PTFC270051M Datasheet (284.20 KB)

Preview of PTFC270051M PDF

Datasheet Details

Part number:

PTFC270051M

Manufacturer:

Infineon ↗

File Size:

284.20 KB

Description:

High power rf ldmos field effect transistor.

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PTFC270051M High Power LDMOS Field Effect Transistor Infineon

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